IXFR20N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

MOSFET

Terminal Form :

THROUGH-HOLE

Channel Mode :

Enhancement

RoHS :

Compliant

Number of Terminals :

3

Drain to Source Resistance :

570 mΩ

Subcategory :

MOSFETs

Input Capacitance :

4.68 nF

Element Configuration :

Single

Pbfree Code :

yes

Terminal Position :

Single

Brand :

IXYS

JESD-609 Code :

e1

Pin Count :

3

Height :

21.34 mm

Transistor Element Material :

SILICON

Vgs (Max) :

±30V

Drain-source On Resistance-Max :

0.5Ohm

Minimum Operating Temperature :

- 55 C

FET Feature :

--

Product Status :

Active

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Series :

HiPerFET™, PolarHT™

Width :

5.21 mm

Transistor Type :

1 N-Channel

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

30 Weeks

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

800 V

Fall Time (Typ) :

25 ns

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Power Dissipation :

166W

Number of Terminations :

3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

4680pF @ 25V

Rise Time :

24ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

800V

Transistor Polarity :

N-Channel

Package :

Tube

Continuous Drain Current (ID) :

11A

Supplier Device Package :

ISOPLUS247™

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

1000 mJ

Number of Pins :

3

Published :

2006

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

166W Tc

Vgs(th) (Max) @ Id :

5V @ 4mA

Min Operating Temperature :

-55 °C

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Style :

Through Hole

Drain to Source Voltage (Vdss) :

800V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Tradename :

HiPerFET

Mounting Type :

Through Hole

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

Rds On (Max) @ Id, Vgs :

500m Ω @ 10A, 10V

Max Power Dissipation :

166 W

Length :

16.13 mm

Turn-Off Delay Time :

70 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Product Number :

IXFR20

JESD-30 Code :

R-PSFM-T3

Power Dissipation (Max) :

166W (Tc)

Case Connection :

Isolated

Rds On Max :

500 mΩ

Max Operating Temperature :

150 °C

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1 Channel

Gate to Source Voltage (Vgs) :

30V

Configuration :

Single

Qualification Status :

Not Qualified

Package / Case :

ISOPLUS247™