IXFR20N120P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.63 Ω

Transistor Application :

SWITCHING

Pbfree Code :

yes

Transistor Type :

1 N-Channel

Continuous Drain Current (ID) :

13A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

RoHS :

Details

Channel Mode :

Enhancement

Case Connection :

Isolated

Product Status :

Active

Series :

HiPerFET™, PolarP2™

Package / Case :

ISOPLUS247™

Brand :

IXYS

Number of Channels :

1 Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Drain to Source Voltage (Vdss) :

1200V

Number of Elements :

1

Vgs(th) (Max) @ Id :

6.5V @ 1mA

DS Breakdown Voltage-Min :

1200 V

Terminal Form :

THROUGH-HOLE

Surface Mount :

No

Factory Lead Time :

30 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

11100pF @ 25V

Mount :

Through Hole

Width :

5.21 mm

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

Single

Transistor Polarity :

N-Channel

Drain Current-Max (Abs) (ID) :

13 A

Published :

2008

JESD-609 Code :

e1

Tradename :

HiPerFET

Gate Charge (Qg) (Max) @ Vgs :

193nC @ 10V

Product Category :

MOSFET

Power Dissipation :

290W

Fall Time (Typ) :

70 ns

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Length :

16.13 mm

Manufacturer :

IXYS

Terminal Position :

Single

Element Configuration :

Single

Power Dissipation-Max :

290W Tc

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

ISOPLUS247™

Transistor Element Material :

SILICON

Power Dissipation (Max) :

290W (Tc)

Rds On (Max) @ Id, Vgs :

630m Ω @ 10A, 10V

Pulsed Drain Current-Max (IDM) :

50A

JESD-30 Code :

R-PSIP-T3

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Turn-Off Delay Time :

72 ns

Height :

21.34 mm

Number of Terminals :

3

Number of Pins :

3

Mounting Style :

Through Hole

Avalanche Energy Rating (Eas) :

1000 mJ

Pin Count :

3

FET Feature :

--

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

290 W

Product Type :

MOSFET

Rise Time :

45ns

Polarity/Channel Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Compliant

Drain to Source Breakdown Voltage :

1.2kV

Package Shape :

RECTANGULAR

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

-55°C~150°C TJ

Base Product Number :

IXFR20

Vgs (Max) :

±30V