IXFR20N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Transistor Element Material :

SILICON

Fall Time (Typ) :

45 ns

Number of Terminals :

3

Series :

HiPerFET™, PolarP2™

Drain to Source Resistance :

640 mΩ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Max Power Dissipation :

230 W

RoHS :

Compliant

Published :

2008

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

Reach Compliance Code :

Compliant

FET Feature :

--

Max Operating Temperature :

150 °C

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

11 A

Power Dissipation-Max (Abs) :

230 W

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max :

230W Tc

Vgs(th) (Max) @ Id :

6.5V @ 1mA

Product Status :

Active

Package / Case :

ISOPLUS247™

Manufacturer :

IXYS Corporation

Terminal Form :

THROUGH-HOLE

Supplier Device Package :

ISOPLUS247™

DS Breakdown Voltage-Min :

1000 V

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Factory Lead Time :

26 Weeks

Package Shape :

RECTANGULAR

Drain to Source Breakdown Voltage :

1kV

Element Configuration :

Single

Rise Time :

37ns

Turn-Off Delay Time :

56 ns

Number of Pins :

3

Continuous Drain Current (ID) :

11A

Drain to Source Voltage (Vdss) :

1000V

Base Product Number :

IXFR20

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Package :

Tube

Vgs (Max) :

±30V

Power Dissipation :

230W

JESD-30 Code :

R-PSIP-T3

Drain-source On Resistance-Max :

0.64Ohm

Rds On Max :

640 mΩ

Min Operating Temperature :

-55 °C

Pulsed Drain Current-Max (IDM) :

50A

Polarity/Channel Type :

N-Channel

Qualification Status :

Not Qualified

Surface Mount :

No

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

500 mJ

Packaging :

Tube

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Case Connection :

Isolated

JESD-609 Code :

e1

Power Dissipation (Max) :

230W (Tc)

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

126nC @ 10V

Rds On (Max) @ Id, Vgs :

640m Ω @ 10A, 10V

Input Capacitance :

7.3 nF