IXFR180N10
- Mfr.Part #
- IXFR180N10
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 165A ISOPLUS247
- Stock
- 15
- In Stock :
- 15
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5.21 mm
- Brand :
- IXYS
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.008Ohm
- REACH SVHC :
- No SVHC
- Surface Mount :
- No
- Reach Compliance Code :
- Compliant
- Element Configuration :
- Single
- Height :
- 21.34 mm
- Transistor Application :
- SWITCHING
- RoHS Status :
- RoHS Compliant
- Power Dissipation (Max) :
- 400W (Tc)
- RoHS :
- Details
- Number of Channels :
- 1 Channel
- Manufacturer :
- IXYS
- Terminal Position :
- Single
- Nominal Vgs :
- 4 V
- FET Type :
- N-Channel
- Product Type :
- MOSFET
- Polarity/Channel Type :
- N-Channel
- Package :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Form :
- THROUGH-HOLE
- Dual Supply Voltage :
- 100V
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 165A
- Transistor Type :
- 1 N-Channel
- Supplier Device Package :
- ISOPLUS247™
- Reverse Recovery Time :
- 250 ns
- Channel Mode :
- Enhancement
- Length :
- 16.13 mm
- Power Dissipation-Max :
- 400W Tc
- Mounting Style :
- Through Hole
- Current Rating :
- 165A
- Configuration :
- Single
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 720A
- Drain to Source Breakdown Voltage :
- 100V
- Minimum Operating Temperature :
- - 55 C
- Number of Elements :
- 1
- Power Dissipation :
- 400W
- Current - Continuous Drain (Id) @ 25°C :
- 165A Tc
- Drain to Source Voltage (Vdss) :
- 100V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- ISOPLUS247™
- Transistor Polarity :
- N-Channel
- Power Dissipation-Max (Abs) :
- 400 W
- Drain Current-Max (Abs) (ID) :
- 165 A
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Voltage - Rated DC :
- 100V
- Pbfree Code :
- yes
- Series :
- HiPerFET™
- FET Feature :
- --
- Turn-Off Delay Time :
- 140 ns
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 65 ns
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Number of Terminals :
- 3
- Isolation Voltage :
- 2.5kV
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 90A, 10V
- Pin Count :
- 3
- Tradename :
- HyperFET
- Maximum Operating Temperature :
- + 150 C
- Number of Pins :
- 247
- Gate Charge (Qg) (Max) @ Vgs :
- 400nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package Shape :
- RECTANGULAR
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 100 V
- Lead Free :
- Lead Free
- Product Category :
- MOSFET
- Published :
- 2000
- Rise Time :
- 90ns
- JESD-30 Code :
- R-PSIP-T3
- Number of Terminations :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Termination :
- Through Hole
- Product Status :
- Not For New Designs
- Base Product Number :
- IXFR180
- Datasheets
- IXFR180N10
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N-Channel Tube 8m Ω @ 90A, 10V ±20V 9400pF @ 25V 400nC @ 10V 100V ISOPLUS247™
IXFR180N10 Description
IXFR180N10 is a HiPerFETTM Power MOSFET. The Operating and Storage Temperature Range is between -55 and +150℃. And the regulator IXFR180N10 in the TO-247-3 package with 400W Power Dissipation. The Power MOSFET IXFR180N10 can be applied in DC-DC converters, Battery chargers, Switched-mode and resonant-mode power supplies, DC choppers, and AC motor control applications.
IXFR180N10 Features
Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<25pF)
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Fast intrinsic Rectifier
IXFR180N10 Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode power supplies
DC choppers
AC motor control
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