IXFR180N06

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Mode :

Enhancement

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

JESD-30 Code :

R-PSIP-T3

Brand :

IXYS

Case Connection :

Isolated

Gate Charge (Qg) (Max) @ Vgs :

420nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7650pF @ 25V

Pulsed Drain Current-Max (IDM) :

720A

Surface Mount :

No

Package :

Tube

Drain to Source Voltage (Vdss) :

60V

Number of Terminals :

3

Mounting Style :

Through Hole

Series :

HiPerFET™

Published :

2000

Terminal Form :

THROUGH-HOLE

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

180A Tc

RoHS :

Details

Product Category :

MOSFET

Packaging :

Tube

Number of Channels :

1 Channel

FET Type :

N-Channel

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

130 ns

Continuous Drain Current (ID) :

180A

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

5m Ω @ 90A, 10V

Maximum Operating Temperature :

+ 150 C

Transistor Type :

1 N-Channel

Pin Count :

3

Qualification Status :

Not Qualified

Power Dissipation :

560W

ECCN Code :

EAR99

Height :

21.34 mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Rise Time :

100ns

Number of Pins :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation (Max) :

560W (Tc)

Base Product Number :

IXFR180

Product Type :

MOSFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

560W Tc

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

3000 mJ

Width :

5.21 mm

Terminal Position :

Single

Tradename :

HyperFET

Minimum Operating Temperature :

- 55 C

Pbfree Code :

yes

Transistor Application :

SWITCHING

Fall Time (Typ) :

55 ns

Polarity/Channel Type :

N-Channel

Product Status :

Not For New Designs

Drain-source On Resistance-Max :

0.005ohm

Operating Temperature :

-55°C~150°C TJ

Manufacturer :

IXYS

Drain to Source Breakdown Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

16.13 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Subcategory :

MOSFETs

Reach Compliance Code :

Compliant

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 8mA

JESD-609 Code :

e1

FET Feature :

--

Supplier Device Package :

ISOPLUS247™

DS Breakdown Voltage-Min :

60 V

Mounting Type :

Through Hole

Package / Case :

ISOPLUS247™

Additional Feature :

AVALANCHE RATED