IXFR180N06

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Type :

MOSFET

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

Isolated

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSIP-T3

JESD-609 Code :

e1

Number of Pins :

3

Width :

5.21 mm

Number of Channels :

1 Channel

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

420nC @ 10V

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

3

Number of Elements :

1

Tradename :

HyperFET

Manufacturer :

IXYS

Drain to Source Voltage (Vdss) :

60V

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Height :

21.34 mm

Supplier Device Package :

ISOPLUS247™

Series :

HiPerFET™

ECCN Code :

EAR99

Packaging :

Tube

FET Feature :

--

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Brand :

IXYS

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

7650pF @ 25V

Drain to Source Breakdown Voltage :

60V

Pbfree Code :

yes

Mounting Type :

Through Hole

FET Type :

N-Channel

Product Category :

MOSFET

Pin Count :

3

Rise Time :

100ns

Number of Terminations :

3

Power Dissipation-Max :

560W Tc

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

720A

Gate to Source Voltage (Vgs) :

20V

Length :

16.13 mm

Element Configuration :

Single

Package / Case :

ISOPLUS247™

Power Dissipation :

560W

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Configuration :

Single

Fall Time (Typ) :

55 ns

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Power Dissipation (Max) :

560W (Tc)

Transistor Application :

SWITCHING

Minimum Operating Temperature :

- 55 C

Turn-Off Delay Time :

130 ns

DS Breakdown Voltage-Min :

60 V

Subcategory :

MOSFETs

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Not For New Designs

Continuous Drain Current (ID) :

180A

Package Shape :

RECTANGULAR

Published :

2000

Mount :

Through Hole

Drain-source On Resistance-Max :

0.005ohm

Transistor Polarity :

N-Channel

Base Product Number :

IXFR180

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

5m Ω @ 90A, 10V

Transistor Type :

1 N-Channel

Reach Compliance Code :

Compliant

Terminal Position :

Single

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

4V @ 8mA

Factory Lead Time :

8 Weeks

Avalanche Energy Rating (Eas) :

3000 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)