IXFR180N06

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Mfr.Part #
IXFR180N06
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 60V 180A ISOPLUS247
Stock
10,640
In Stock :
10,640

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Brand :
IXYS
RoHS :
Details
Drain-source On Resistance-Max :
0.005ohm
Rds On (Max) @ Id, Vgs :
5m Ω @ 90A, 10V
FET Type :
N-Channel
Terminal Position :
Single
Drain to Source Breakdown Voltage :
60V
Number of Terminals :
3
Product Status :
Not For New Designs
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
130 ns
Qualification Status :
Not Qualified
Supplier Device Package :
ISOPLUS247™
Pin Count :
3
Width :
5.21 mm
Maximum Operating Temperature :
+ 150 C
Power Dissipation (Max) :
560W (Tc)
Length :
16.13 mm
Minimum Operating Temperature :
- 55 C
Vgs(th) (Max) @ Id :
4V @ 8mA
Case Connection :
Isolated
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Subcategory :
MOSFETs
Drive Voltage (Max Rds On,Min Rds On) :
10V
Transistor Element Material :
SILICON
Published :
2000
Transistor Polarity :
N-Channel
Reach Compliance Code :
Compliant
Number of Channels :
1 Channel
Operating Temperature :
-55°C~150°C TJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Rise Time :
100ns
JESD-30 Code :
R-PSIP-T3
Number of Terminations :
3
Product Type :
MOSFET
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
60 V
Power Dissipation :
560W
Package :
Tube
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
JESD-609 Code :
e1
Transistor Application :
SWITCHING
Factory Lead Time :
8 Weeks
Vgs (Max) :
±20V
Number of Elements :
1
Base Product Number :
IXFR180
Power Dissipation-Max :
560W Tc
Surface Mount :
No
Pbfree Code :
yes
Transistor Type :
1 N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
7650pF @ 25V
Product Category :
MOSFET
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
720A
Gate to Source Voltage (Vgs) :
20V
Tradename :
HyperFET
Element Configuration :
Single
ECCN Code :
EAR99
Fall Time (Typ) :
55 ns
Mounting Style :
Through Hole
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Number of Pins :
3
Packaging :
Tube
Continuous Drain Current (ID) :
180A
Channel Mode :
Enhancement
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
420nC @ 10V
RoHS Status :
RoHS Compliant
Avalanche Energy Rating (Eas) :
3000 mJ
Polarity/Channel Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Package / Case :
ISOPLUS247™
Height :
21.34 mm
Series :
HiPerFET™
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Drain to Source Voltage (Vdss) :
60V
Manufacturer :
IXYS
Mounting Type :
Through Hole
FET Feature :
--
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR180N06 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:ISOPLUS247™, Mounting Type:Through Hole, IXFR180N06 pinout, IXFR180N06 datasheet PDF, IXFR180N06 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR180N06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR180N06


N-Channel Tube 5m Ω @ 90A, 10V ±20V 7650pF @ 25V 420nC @ 10V 60V ISOPLUS247™

IXFR180N06 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 7650pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 130 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 720A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60 V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFR180N06 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 720A.
a 60V drain to source voltage (Vdss)


IXFR180N06 Applications


There are a lot of IXYS
IXFR180N06 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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