IXFR180N06

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Mfr.Part #
IXFR180N06
Manufacturer
Littelfuse
Package / Case
ISOPLUS247™
Datasheet
Download
Description
MOSFET N-CH 60V 180A ISOPLUS247
Stock
10,640
In Stock :
10,640

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
Isolated
Operating Temperature :
-55°C~150°C TJ
JESD-30 Code :
R-PSIP-T3
JESD-609 Code :
e1
Number of Pins :
3
Width :
5.21 mm
Number of Channels :
1 Channel
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
420nC @ 10V
Maximum Operating Temperature :
+ 150 C
Number of Terminals :
3
Number of Elements :
1
Tradename :
HyperFET
Manufacturer :
IXYS
Drain to Source Voltage (Vdss) :
60V
Mounting Style :
Through Hole
Operating Mode :
ENHANCEMENT MODE
Qualification Status :
Not Qualified
Height :
21.34 mm
Supplier Device Package :
ISOPLUS247™
Series :
HiPerFET™
ECCN Code :
EAR99
Packaging :
Tube
FET Feature :
--
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Brand :
IXYS
RoHS :
Details
Input Capacitance (Ciss) (Max) @ Vds :
7650pF @ 25V
Drain to Source Breakdown Voltage :
60V
Pbfree Code :
yes
Mounting Type :
Through Hole
FET Type :
N-Channel
Product Category :
MOSFET
Pin Count :
3
Rise Time :
100ns
Number of Terminations :
3
Power Dissipation-Max :
560W Tc
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
720A
Gate to Source Voltage (Vgs) :
20V
Length :
16.13 mm
Element Configuration :
Single
Package / Case :
ISOPLUS247™
Power Dissipation :
560W
Current - Continuous Drain (Id) @ 25°C :
180A Tc
Configuration :
Single
Fall Time (Typ) :
55 ns
Polarity/Channel Type :
N-Channel
Channel Mode :
Enhancement
Power Dissipation (Max) :
560W (Tc)
Transistor Application :
SWITCHING
Minimum Operating Temperature :
- 55 C
Turn-Off Delay Time :
130 ns
DS Breakdown Voltage-Min :
60 V
Subcategory :
MOSFETs
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Status :
Not For New Designs
Continuous Drain Current (ID) :
180A
Package Shape :
RECTANGULAR
Published :
2000
Mount :
Through Hole
Drain-source On Resistance-Max :
0.005ohm
Transistor Polarity :
N-Channel
Base Product Number :
IXFR180
Additional Feature :
AVALANCHE RATED
Surface Mount :
No
Rds On (Max) @ Id, Vgs :
5m Ω @ 90A, 10V
Transistor Type :
1 N-Channel
Reach Compliance Code :
Compliant
Terminal Position :
Single
Package :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
RoHS Compliant
Vgs(th) (Max) @ Id :
4V @ 8mA
Factory Lead Time :
8 Weeks
Avalanche Energy Rating (Eas) :
3000 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFR180N06 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:ISOPLUS247™, IXFR180N06 pinout, IXFR180N06 datasheet PDF, IXFR180N06 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFR180N06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFR180N06


N-Channel Tube 5m Ω @ 90A, 10V ±20V 7650pF @ 25V 420nC @ 10V 60V ISOPLUS247™

IXFR180N06 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 7650pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 180A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 130 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 720A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60 V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFR180N06 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 720A.
a 60V drain to source voltage (Vdss)


IXFR180N06 Applications


There are a lot of IXYS
IXFR180N06 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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