IXFR16N120P
- Mfr.Part #
- IXFR16N120P
- Manufacturer
- Littelfuse
- Package / Case
- ISOPLUS247™
- Datasheet
- Download
- Description
- MOSFET N-CH 1200V 9A ISOPLUS247
- Stock
- 39,003
- In Stock :
- 39,003
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- --
- Minimum Operating Temperature :
- - 55 C
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Type :
- 1 N-Channel
- Number of Terminals :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 9A
- Element Configuration :
- Single
- Width :
- 5.21 mm
- Height :
- 21.34 mm
- FET Type :
- N-Channel
- Length :
- 16.13 mm
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 1.2kV
- Power Dissipation-Max (Abs) :
- 230 W
- Rds On (Max) @ Id, Vgs :
- 1.04 Ω @ 8A, 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Style :
- Through Hole
- Manufacturer :
- IXYS
- Transistor Polarity :
- N-Channel
- Case Connection :
- Isolated
- Number of Pins :
- 3
- Drain-source On Resistance-Max :
- 1.04 Ω
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Terminal Position :
- Single
- Supplier Device Package :
- ISOPLUS247™
- Reach Compliance Code :
- Compliant
- Base Product Number :
- IXFR16
- Surface Mount :
- No
- Power Dissipation (Max) :
- 230W (Tc)
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 1200V
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Number of Terminations :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 1200 V
- Rise Time :
- 28ns
- Product Category :
- MOSFET
- Factory Lead Time :
- 30 Weeks
- Transistor Application :
- SWITCHING
- Tradename :
- HiPerFET
- Vgs(th) (Max) @ Id :
- 6.5V @ 1mA
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Product Status :
- Active
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- ISOPLUS247™
- Turn-Off Delay Time :
- 66 ns
- Vgs (Max) :
- ±30V
- Package :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Published :
- 2012
- Input Capacitance (Ciss) (Max) @ Vds :
- 6900pF @ 25V
- JESD-30 Code :
- R-PSIP-T3
- Mounting Type :
- Through Hole
- Product Type :
- MOSFET
- Packaging :
- Tube
- Polarity/Channel Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 9A
- Pin Count :
- 3
- Fall Time (Typ) :
- 35 ns
- Configuration :
- Single
- Series :
- HiPerFET™, PolarP2™
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Brand :
- IXYS
- Number of Channels :
- 1 Channel
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 230W Tc
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 800 mJ
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Maximum Operating Temperature :
- + 150 C
- Power Dissipation :
- 230W
- Package Shape :
- RECTANGULAR
- RoHS :
- Details
- Channel Mode :
- Enhancement
- Datasheets
- IXFR16N120P
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N-Channel Tube 1.04 Ω @ 8A, 10V ±30V 6900pF @ 25V 120nC @ 10V 1200V ISOPLUS247™
IXFR16N120P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 800 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6900pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.Using VGS=1.2kV and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 1.2kV (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 66 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 35 A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 1200 V.This transistor requires a drain-source voltage (Vdss) of 1200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFR16N120P Features
the avalanche energy rating (Eas) is 800 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 35 A.
a 1200V drain to source voltage (Vdss)
IXFR16N120P Applications
There are a lot of IXYS
IXFR16N120P applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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