IXFP8N50PM
- Mfr.Part #
- IXFP8N50PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 4.4A TO220AB
- Stock
- 9,092
- In Stock :
- 9,092
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 5.5V @ 1mA
- Package :
- Tube
- Package Shape :
- RECTANGULAR
- DS Breakdown Voltage-Min :
- 500 V
- Turn-Off Delay Time :
- 65 ns
- Package / Case :
- TO-220-3
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation (Max) :
- 42W (Tc)
- Series :
- HiPerFET™, PolarHT™
- Max Power Dissipation :
- 42 W
- Number of Terminals :
- 3
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 14A
- Supplier Device Package :
- TO-220AB
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Transistor Application :
- SWITCHING
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On Max :
- 800 mΩ
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Turn-On Delay Time :
- 22 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Drain to Source Voltage (Vdss) :
- 500V
- Input Capacitance :
- 1.05 nF
- Manufacturer :
- IXYS Corporation
- Vgs (Max) :
- ±30V
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Terminal Finish :
- Matte Tin (Sn)
- Base Product Number :
- IXFP8N50
- Product Status :
- Obsolete
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Number of Terminations :
- 3
- Fall Time (Typ) :
- 23 ns
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Case Connection :
- Isolated
- Length :
- 10.66mm
- Min Operating Temperature :
- -55 °C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1050pF @ 25V
- Terminal Position :
- Single
- Power Dissipation :
- 42W
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Drain to Source Resistance :
- 800 mΩ
- Drain to Source Breakdown Voltage :
- 500V
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 42W Tc
- Height :
- 9.15mm
- Reach Compliance Code :
- Compliant
- Additional Feature :
- AVALANCHE RATED
- Continuous Drain Current (ID) :
- 4.4A
- Turn On Delay Time :
- 22 ns
- Max Operating Temperature :
- 150 °C
- Pbfree Code :
- yes
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-220AB
- Width :
- 4.83mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Compliant
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.8Ohm
- RoHS Status :
- RoHS Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Rise Time :
- 28ns
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4A, 10V
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Datasheets
- IXFP8N50PM

N-Channel Tube 800m Ω @ 4A, 10V ±30V 1050pF @ 25V 20nC @ 10V 500V TO-220-3
IXFP8N50PM Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 300 mJ.A device's maximum input capacitance is 1050pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 4.4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 65 ns.Its maximum pulsed drain current is 14A, which is also its maximum rating peak drainage current.The Drain-to-Source Resistance (DTS) of a MOSFET is 800 mΩ when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.For normal operation, maintain the DS breakdown voltage above 500 V.To operate this transistor, you need to apply a 500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFP8N50PM Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 14A.
single MOSFETs transistor is 800 mΩ
a 500V drain to source voltage (Vdss)
IXFP8N50PM Applications
There are a lot of IXYS
IXFP8N50PM applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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