IXFP14N60P3
- Mfr.Part #
- IXFP14N60P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO220AB
- Stock
- 22,290
- In Stock :
- 22,290
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 14 A
- Power Dissipation-Max (Abs) :
- 327 W
- FET Type :
- N-Channel
- Package Shape :
- RECTANGULAR
- Turn-Off Delay Time :
- 43 ns
- Package :
- Tube
- Width :
- 4.83mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-220AB
- Number of Elements per Chip :
- 1
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Avalanche Energy Rating (Eas) :
- 700 mJ
- DS Breakdown Voltage-Min :
- 600V
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Turn On Delay Time :
- 21 ns
- Height :
- 16mm
- Channel Type :
- N
- Vgs (Max) :
- ±30V
- Continuous Drain Current (ID) :
- 14A
- Series :
- HiPerFET™, Polar3™
- Minimum Operating Temperature :
- -55 °C
- Manufacturer :
- IXYS Corporation
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Package Type :
- TO-220
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- +150 °C
- Drain-source On Resistance-Max :
- 0.54Ohm
- Drain to Source Voltage (Vdss) :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2011
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 540m Ω @ 7A, 10V
- Length :
- 10.66mm
- Additional Feature :
- AVALANCHE RATED
- Pulsed Drain Current-Max (IDM) :
- 35 A
- Number of Elements :
- 1
- Factory Lead Time :
- 10 Weeks
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Channel Mode :
- Enhancement
- Power Dissipation (Max) :
- 327W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1480pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Reach Compliance Code :
- Compliant
- JEDEC-95 Code :
- TO-220AB
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminals :
- 3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Power Dissipation-Max :
- 327W Tc
- Pin Count :
- 3
- Terminal Position :
- Single
- FET Feature :
- --
- Base Product Number :
- IXFP14
- Product Status :
- Obsolete
- Datasheets
- IXFP14N60P3

N-Channel Tube 540m Ω @ 7A, 10V ±30V 1480pF @ 25V 25nC @ 10V 600V TO-220-3
IXFP14N60P3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 1480pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.As shown in the table below, the drain current of this device is 14 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 43 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 35 A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 21 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IXFP14N60P3 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 43 ns
based on its rated peak drain current 35 A.
a 600V drain to source voltage (Vdss)
IXFP14N60P3 Applications
There are a lot of IXYS
IXFP14N60P3 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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