IXFP14N60P3

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Mfr.Part #
IXFP14N60P3
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO220AB
Stock
22,290
In Stock :
22,290

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
14 A
Power Dissipation-Max (Abs) :
327 W
FET Type :
N-Channel
Package Shape :
RECTANGULAR
Turn-Off Delay Time :
43 ns
Package :
Tube
Width :
4.83mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Supplier Device Package :
TO-220AB
Number of Elements per Chip :
1
Vgs(th) (Max) @ Id :
5V @ 1mA
Avalanche Energy Rating (Eas) :
700 mJ
DS Breakdown Voltage-Min :
600V
Mount :
Through Hole
Package / Case :
TO-220-3
Number of Terminations :
3
Turn On Delay Time :
21 ns
Height :
16mm
Channel Type :
N
Vgs (Max) :
±30V
Continuous Drain Current (ID) :
14A
Series :
HiPerFET™, Polar3™
Minimum Operating Temperature :
-55 °C
Manufacturer :
IXYS Corporation
Number of Pins :
3
JESD-30 Code :
R-PSFM-T3
Package Type :
TO-220
Configuration :
SINGLE WITH BUILT-IN DIODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+150 °C
Drain-source On Resistance-Max :
0.54Ohm
Drain to Source Voltage (Vdss) :
600V
RoHS Status :
ROHS3 Compliant
Published :
2011
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
540m Ω @ 7A, 10V
Length :
10.66mm
Additional Feature :
AVALANCHE RATED
Pulsed Drain Current-Max (IDM) :
35 A
Number of Elements :
1
Factory Lead Time :
10 Weeks
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Element Configuration :
Single
Gate to Source Voltage (Vgs) :
30V
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Channel Mode :
Enhancement
Power Dissipation (Max) :
327W (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
1480pF @ 25V
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
JEDEC-95 Code :
TO-220AB
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Number of Terminals :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Surface Mount :
No
Terminal Form :
THROUGH-HOLE
Power Dissipation-Max :
327W Tc
Pin Count :
3
Terminal Position :
Single
FET Feature :
--
Base Product Number :
IXFP14
Product Status :
Obsolete
Datasheets
IXFP14N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Terminations:3, Number of Pins:3, Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, IXFP14N60P3 pinout, IXFP14N60P3 datasheet PDF, IXFP14N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP14N60P3


N-Channel Tube 540m Ω @ 7A, 10V ±30V 1480pF @ 25V 25nC @ 10V 600V TO-220-3

IXFP14N60P3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 700 mJ.The maximum input capacitance of this device is 1480pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.As shown in the table below, the drain current of this device is 14 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 43 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 35 A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 21 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFP14N60P3 Features


the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 43 ns
based on its rated peak drain current 35 A.
a 600V drain to source voltage (Vdss)


IXFP14N60P3 Applications


There are a lot of IXYS
IXFP14N60P3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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