IXFP14N60P

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Mfr.Part #
IXFP14N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO220AB
Stock
3,355
In Stock :
3,355

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Continuous Drain Current (ID) :
14A
Power Dissipation (Max) :
300W (Tc)
Supplier Device Package :
TO-220AB
Additional Feature :
AVALANCHE RATED
Drain-source On Resistance-Max :
0.55Ohm
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS :
Details
Height :
9.15 mm
Packaging :
Tube
Configuration :
Single
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Number of Elements :
1
Length :
10.66 mm
JESD-609 Code :
e3
ECCN Code :
EAR99
Case Connection :
DRAIN
Transistor Type :
1 N-Channel
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
14 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Power Dissipation-Max (Abs) :
300 W
Vgs (Max) :
±30V
Minimum Operating Temperature :
- 55 C
Brand :
IXYS
Reach Compliance Code :
Compliant
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Number of Channels :
1 Channel
FET Feature :
--
Mounting Type :
Through Hole
Tradename :
HiPerFET
Gate to Source Voltage (Vgs) :
30V
Maximum Operating Temperature :
+ 150 C
Published :
2008
Mount :
Through Hole
Qualification Status :
Not Qualified
JESD-30 Code :
R-PSFM-T3
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Polarity :
N-Channel
Package / Case :
TO-220-3
Current Rating :
14A
Product Category :
MOSFET
Factory Lead Time :
26 Weeks
Width :
4.83 mm
Mounting Style :
Through Hole
FET Technology :
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code :
TO-220AB
Manufacturer :
IXYS
Fall Time (Typ) :
26 ns
Rise Time :
27ns
RoHS Status :
ROHS3 Compliant
Number of Terminals :
3
Pbfree Code :
yes
DS Breakdown Voltage-Min :
600 V
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Series :
HiPerFET™, PolarHT™
Polarity/Channel Type :
N-Channel
Product Status :
Active
Product Type :
MOSFET
Turn-Off Delay Time :
70 ns
Surface Mount :
No
Package Shape :
RECTANGULAR
Number of Terminations :
3
Power Dissipation-Max :
300W Tc
Pulsed Drain Current-Max (IDM) :
42A
Lead Free :
Lead Free
Power Dissipation :
300W
Terminal Position :
Single
Package :
Tube
Transistor Application :
SWITCHING
Base Product Number :
IXFP14
Drain to Source Voltage (Vdss) :
600V
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Drain to Source Breakdown Voltage :
600V
Channel Mode :
Enhancement
Voltage - Rated DC :
600V
Terminal Finish :
Matte Tin (Sn)
Pin Count :
3
Avalanche Energy Rating (Eas) :
900 mJ
Datasheets
IXFP14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFP14N60P pinout, IXFP14N60P datasheet PDF, IXFP14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3

IXFP14N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFP14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXFP14N60P Applications


There are a lot of IXYS
IXFP14N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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