IXFP14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Package :

Tube

Drain Current-Max (Abs) (ID) :

14 A

Factory Lead Time :

26 Weeks

DS Breakdown Voltage-Min :

600 V

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Configuration :

Single

Power Dissipation :

300W

Mounting Style :

Through Hole

Package / Case :

TO-220-3

Turn-Off Delay Time :

70 ns

Power Dissipation-Max :

300W Tc

Pbfree Code :

yes

Brand :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs (Max) :

±30V

Fall Time (Typ) :

26 ns

Maximum Operating Temperature :

+ 150 C

Voltage - Rated DC :

600V

Length :

10.66 mm

Pin Count :

3

Number of Elements :

1

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Product Category :

MOSFET

Transistor Type :

1 N-Channel

Drain to Source Voltage (Vdss) :

600V

Supplier Device Package :

TO-220AB

JESD-609 Code :

e3

Surface Mount :

No

Power Dissipation-Max (Abs) :

300 W

RoHS Status :

ROHS3 Compliant

Width :

4.83 mm

Element Configuration :

Single

Product Status :

Active

FET Type :

N-Channel

Continuous Drain Current (ID) :

14A

Drain-source On Resistance-Max :

0.55Ohm

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Product Type :

MOSFET

RoHS :

Details

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

600V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HiPerFET™, PolarHT™

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Case Connection :

DRAIN

Packaging :

Tube

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

900 mJ

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

THROUGH-HOLE

ECCN Code :

EAR99

Base Product Number :

IXFP14

Reach Compliance Code :

Compliant

Minimum Operating Temperature :

- 55 C

Number of Pins :

3

Channel Mode :

Enhancement

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

42A

Lead Free :

Lead Free

Rise Time :

27ns

Mount :

Through Hole

Power Dissipation (Max) :

300W (Tc)

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Current Rating :

14A

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Manufacturer :

IXYS

Transistor Application :

SWITCHING

Published :

2008

Height :

9.15 mm

Polarity/Channel Type :

N-Channel

Tradename :

HiPerFET

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED