IXFP14N60P

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Mfr.Part #
IXFP14N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO220AB
Stock
3,355
In Stock :
3,355

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Terminal Finish :
Matte Tin (Sn)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JESD-609 Code :
e3
Power Dissipation (Max) :
300W (Tc)
Package Shape :
RECTANGULAR
Number of Terminations :
3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Factory Lead Time :
26 Weeks
Drain to Source Voltage (Vdss) :
600V
JESD-30 Code :
R-PSFM-T3
FET Feature :
--
Rise Time :
27ns
Transistor Type :
1 N-Channel
Pulsed Drain Current-Max (IDM) :
42A
Number of Terminals :
3
Turn-Off Delay Time :
70 ns
Configuration :
Single
Drain Current-Max (Abs) (ID) :
14 A
Height :
9.15 mm
Vgs (Max) :
±30V
Surface Mount :
No
Element Configuration :
Single
Power Dissipation-Max :
300W Tc
JEDEC-95 Code :
TO-220AB
RoHS :
Details
Terminal Form :
THROUGH-HOLE
Length :
10.66 mm
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Number of Pins :
3
RoHS Status :
ROHS3 Compliant
Transistor Polarity :
N-Channel
Qualification Status :
Not Qualified
FET Type :
N-Channel
Width :
4.83 mm
Transistor Element Material :
SILICON
Current Rating :
14A
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
600V
Package / Case :
TO-220-3
Brand :
IXYS
Power Dissipation :
300W
Fall Time (Typ) :
26 ns
Number of Elements :
1
Operating Mode :
ENHANCEMENT MODE
Product Type :
MOSFET
Avalanche Energy Rating (Eas) :
900 mJ
Polarity/Channel Type :
N-Channel
Package :
Tube
Pbfree Code :
yes
Lead Free :
Lead Free
Tradename :
HiPerFET
Packaging :
Tube
Continuous Drain Current (ID) :
14A
ECCN Code :
EAR99
Product Status :
Active
Maximum Operating Temperature :
+ 150 C
Base Product Number :
IXFP14
Transistor Application :
SWITCHING
Pin Count :
3
Product Category :
MOSFET
Number of Channels :
1 Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Reach Compliance Code :
Compliant
Mount :
Through Hole
Manufacturer :
IXYS
Drain-source On Resistance-Max :
0.55Ohm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
30V
DS Breakdown Voltage-Min :
600 V
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Power Dissipation-Max (Abs) :
300 W
Voltage - Rated DC :
600V
Series :
HiPerFET™, PolarHT™
Published :
2008
Case Connection :
DRAIN
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Channel Mode :
Enhancement
Mounting Style :
Through Hole
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Terminal Position :
Single
Datasheets
IXFP14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFP14N60P pinout, IXFP14N60P datasheet PDF, IXFP14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3

IXFP14N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFP14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXFP14N60P Applications


There are a lot of IXYS
IXFP14N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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