IXFP14N60P

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Mfr.Part #
IXFP14N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO220AB
Stock
3,355
In Stock :
3,355

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Product Type :
MOSFET
Manufacturer :
IXYS
Continuous Drain Current (ID) :
14A
JEDEC-95 Code :
TO-220AB
Packaging :
Tube
Number of Terminations :
3
Length :
10.66 mm
Operating Mode :
ENHANCEMENT MODE
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Power Dissipation-Max (Abs) :
300 W
Product Category :
MOSFET
Pulsed Drain Current-Max (IDM) :
42A
Surface Mount :
No
Drain to Source Voltage (Vdss) :
600V
Element Configuration :
Single
Transistor Polarity :
N-Channel
Package Shape :
RECTANGULAR
Published :
2008
Drain-source On Resistance-Max :
0.55Ohm
Power Dissipation :
300W
Drain to Source Breakdown Voltage :
600V
Transistor Type :
1 N-Channel
Number of Pins :
3
JESD-609 Code :
e3
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Turn-Off Delay Time :
70 ns
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Current Rating :
14A
FET Feature :
--
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Package :
Tube
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 150 C
Configuration :
Single
Number of Terminals :
3
Series :
HiPerFET™, PolarHT™
FET Type :
N-Channel
Drain Current-Max (Abs) (ID) :
14 A
RoHS Status :
ROHS3 Compliant
Minimum Operating Temperature :
- 55 C
Terminal Finish :
Matte Tin (Sn)
Factory Lead Time :
26 Weeks
Operating Temperature :
-55°C~150°C TJ
Width :
4.83 mm
Base Product Number :
IXFP14
Supplier Device Package :
TO-220AB
Terminal Position :
Single
Transistor Application :
SWITCHING
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Tradename :
HiPerFET
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Height :
9.15 mm
Terminal Form :
THROUGH-HOLE
Product Status :
Active
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Mounting Style :
Through Hole
Voltage - Rated DC :
600V
Additional Feature :
AVALANCHE RATED
Power Dissipation-Max :
300W Tc
Fall Time (Typ) :
26 ns
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Number of Channels :
1 Channel
Pbfree Code :
yes
DS Breakdown Voltage-Min :
600 V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lead Free :
Lead Free
RoHS :
Details
Mount :
Through Hole
Mounting Type :
Through Hole
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Power Dissipation (Max) :
300W (Tc)
Avalanche Energy Rating (Eas) :
900 mJ
Rise Time :
27ns
Vgs (Max) :
±30V
Gate to Source Voltage (Vgs) :
30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Channel Mode :
Enhancement
Brand :
IXYS
Qualification Status :
Not Qualified
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
IXFP14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFP14N60P pinout, IXFP14N60P datasheet PDF, IXFP14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3

IXFP14N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFP14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXFP14N60P Applications


There are a lot of IXYS
IXFP14N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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