IXFP14N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Width :

4.83 mm

Pin Count :

3

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Power Dissipation :

300W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Channel Mode :

Enhancement

FET Feature :

--

Current Rating :

14A

Supplier Device Package :

TO-220AB

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Lead Free :

Lead Free

DS Breakdown Voltage-Min :

600 V

Product Category :

MOSFET

Number of Channels :

1 Channel

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Voltage - Rated DC :

600V

Product Type :

MOSFET

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

300W (Tc)

Number of Terminals :

3

Product Status :

Active

Fall Time (Typ) :

26 ns

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Height :

9.15 mm

RoHS :

Details

Manufacturer :

IXYS

Pulsed Drain Current-Max (IDM) :

42A

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

14 A

Mount :

Through Hole

Series :

HiPerFET™, PolarHT™

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

550m Ω @ 7A, 10V

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Published :

2008

Base Product Number :

IXFP14

Terminal Finish :

Matte Tin (Sn)

Continuous Drain Current (ID) :

14A

Turn-Off Delay Time :

70 ns

Drain to Source Breakdown Voltage :

600V

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.55Ohm

Packaging :

Tube

ECCN Code :

EAR99

Package :

Tube

Transistor Type :

1 N-Channel

Package / Case :

TO-220-3

Package Shape :

RECTANGULAR

Length :

10.66 mm

Terminal Position :

Single

Power Dissipation-Max :

300W Tc

Mounting Style :

Through Hole

JESD-609 Code :

e3

Tradename :

HiPerFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

300 W

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Configuration :

Single

Brand :

IXYS

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

900 mJ

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Reach Compliance Code :

Compliant

Factory Lead Time :

26 Weeks

Vgs (Max) :

±30V

Number of Terminations :

3

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Rise Time :

27ns