IXFP14N60P

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Mfr.Part #
IXFP14N60P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 14A TO220AB
Stock
3,355
In Stock :
3,355

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2008
Supplier Device Package :
TO-220AB
Vgs(th) (Max) @ Id :
5.5V @ 2.5mA
Width :
4.83 mm
Number of Terminals :
3
Transistor Type :
1 N-Channel
Current Rating :
14A
Package Shape :
RECTANGULAR
Number of Pins :
3
Mounting Style :
Through Hole
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~150°C TJ
JESD-609 Code :
e3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Case Connection :
DRAIN
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Drain-source On Resistance-Max :
0.55Ohm
Number of Terminations :
3
Reach Compliance Code :
Compliant
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
FET Type :
N-Channel
Tradename :
HiPerFET
Drain to Source Breakdown Voltage :
600V
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
300W Tc
Height :
9.15 mm
Drain to Source Voltage (Vdss) :
600V
Product Type :
MOSFET
Base Product Number :
IXFP14
Continuous Drain Current (ID) :
14A
Configuration :
Single
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Maximum Operating Temperature :
+ 150 C
Pbfree Code :
yes
Terminal Finish :
Matte Tin (Sn)
Package :
Tube
Power Dissipation :
300W
Element Configuration :
Single
Voltage - Rated DC :
600V
Pin Count :
3
Series :
HiPerFET™, PolarHT™
FET Feature :
--
Turn-Off Delay Time :
70 ns
Rise Time :
27ns
Avalanche Energy Rating (Eas) :
900 mJ
Mount :
Through Hole
Lead Free :
Lead Free
Transistor Polarity :
N-Channel
JESD-30 Code :
R-PSFM-T3
Polarity/Channel Type :
N-Channel
Power Dissipation (Max) :
300W (Tc)
Transistor Application :
SWITCHING
Manufacturer :
IXYS
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-220-3
Rds On (Max) @ Id, Vgs :
550m Ω @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Surface Mount :
No
DS Breakdown Voltage-Min :
600 V
Drain Current-Max (Abs) (ID) :
14 A
Factory Lead Time :
26 Weeks
Brand :
IXYS
Channel Mode :
Enhancement
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Terminal Position :
Single
Number of Channels :
1 Channel
Power Dissipation-Max (Abs) :
300 W
Product Category :
MOSFET
Terminal Form :
THROUGH-HOLE
Fall Time (Typ) :
26 ns
Number of Elements :
1
JEDEC-95 Code :
TO-220AB
Length :
10.66 mm
Packaging :
Tube
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
30V
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
42A
Vgs (Max) :
±30V
Minimum Operating Temperature :
- 55 C
Datasheets
IXFP14N60P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Package / Case:TO-220-3, Number of Channels:1 Channel, Mounting Type:Through Hole, IXFP14N60P pinout, IXFP14N60P datasheet PDF, IXFP14N60P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP14N60P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP14N60P


N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3

IXFP14N60P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFP14N60P Features


the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)


IXFP14N60P Applications


There are a lot of IXYS
IXFP14N60P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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