IXFP14N60P
- Mfr.Part #
- IXFP14N60P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A TO220AB
- Stock
- 3,355
- In Stock :
- 3,355
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2008
- Supplier Device Package :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 5.5V @ 2.5mA
- Width :
- 4.83 mm
- Number of Terminals :
- 3
- Transistor Type :
- 1 N-Channel
- Current Rating :
- 14A
- Package Shape :
- RECTANGULAR
- Number of Pins :
- 3
- Mounting Style :
- Through Hole
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Case Connection :
- DRAIN
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Drain-source On Resistance-Max :
- 0.55Ohm
- Number of Terminations :
- 3
- Reach Compliance Code :
- Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 36nC @ 10V
- FET Type :
- N-Channel
- Tradename :
- HiPerFET
- Drain to Source Breakdown Voltage :
- 600V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 300W Tc
- Height :
- 9.15 mm
- Drain to Source Voltage (Vdss) :
- 600V
- Product Type :
- MOSFET
- Base Product Number :
- IXFP14
- Continuous Drain Current (ID) :
- 14A
- Configuration :
- Single
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Maximum Operating Temperature :
- + 150 C
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Package :
- Tube
- Power Dissipation :
- 300W
- Element Configuration :
- Single
- Voltage - Rated DC :
- 600V
- Pin Count :
- 3
- Series :
- HiPerFET™, PolarHT™
- FET Feature :
- --
- Turn-Off Delay Time :
- 70 ns
- Rise Time :
- 27ns
- Avalanche Energy Rating (Eas) :
- 900 mJ
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Transistor Polarity :
- N-Channel
- JESD-30 Code :
- R-PSFM-T3
- Polarity/Channel Type :
- N-Channel
- Power Dissipation (Max) :
- 300W (Tc)
- Transistor Application :
- SWITCHING
- Manufacturer :
- IXYS
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 550m Ω @ 7A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Surface Mount :
- No
- DS Breakdown Voltage-Min :
- 600 V
- Drain Current-Max (Abs) (ID) :
- 14 A
- Factory Lead Time :
- 26 Weeks
- Brand :
- IXYS
- Channel Mode :
- Enhancement
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 25V
- Terminal Position :
- Single
- Number of Channels :
- 1 Channel
- Power Dissipation-Max (Abs) :
- 300 W
- Product Category :
- MOSFET
- Terminal Form :
- THROUGH-HOLE
- Fall Time (Typ) :
- 26 ns
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Length :
- 10.66 mm
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 42A
- Vgs (Max) :
- ±30V
- Minimum Operating Temperature :
- - 55 C
- Datasheets
- IXFP14N60P

N-Channel Tube 550m Ω @ 7A, 10V ±30V 2500pF @ 25V 36nC @ 10V 600V TO-220-3
IXFP14N60P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 900 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.A device's drain current is its maximum continuous current, and this device's drain current is 14 A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.A maximum pulsed drain current of 42A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 600 V.In order to operate this transistor, a voltage of 600V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFP14N60P Features
the avalanche energy rating (Eas) is 900 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 42A.
a 600V drain to source voltage (Vdss)
IXFP14N60P Applications
There are a lot of IXYS
IXFP14N60P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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