IXFP12N50PM

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Product Status :

Active

Terminal Position :

Single

Product Category :

MOSFET

Transistor Type :

1 N-Channel

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Turn-Off Delay Time :

65 ns

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Drain to Source Breakdown Voltage :

500V

Number of Terminals :

3

Case Connection :

Isolated

Manufacturer :

IXYS

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Tradename :

HiPerFET

Vgs (Max) :

±30V

Mount :

Through Hole

Transistor Polarity :

N-Channel

Power Dissipation-Max (Abs) :

50 W

Number of Terminations :

3

Minimum Operating Temperature :

- 55 C

Power Dissipation-Max :

50W Tc

Brand :

IXYS

Element Configuration :

Single

Drain-source On Resistance-Max :

0.5Ohm

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Number of Channels :

1 Channel

FET Feature :

--

Avalanche Energy Rating (Eas) :

600 mJ

Mounting Style :

Through Hole

Length :

10.66 mm

Terminal Form :

THROUGH-HOLE

Packaging :

Tube

Base Product Number :

IXFP12

Width :

4.83 mm

Rise Time :

27ns

Series :

HiPerFET™, PolarP2™

Reach Compliance Code :

Compliant

Fall Time (Typ) :

20 ns

DS Breakdown Voltage-Min :

500 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Details

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

500m Ω @ 6A, 10V

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

500V

Power Dissipation :

50W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

Single

Gate to Source Voltage (Vgs) :

30V

Supplier Device Package :

TO-220AB

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

30A

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Package :

Tube

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Published :

2008

Continuous Drain Current (ID) :

6A

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Height :

9.15 mm

JESD-30 Code :

R-PSFM-T3

Channel Mode :

Enhancement

Power Dissipation (Max) :

50W (Tc)

JESD-609 Code :

e3

Product Type :

MOSFET