IXFP10N60P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Turn-Off Delay Time :

65 ns

Package / Case :

TO-220-3

FET Feature :

--

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Brand :

IXYS

Avalanche Energy Rating (Eas) :

500 mJ

Configuration :

Single

Base Product Number :

IXFP10

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

23 ns

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

600V

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.74 Ω

Height :

9.15mm

Minimum Operating Temperature :

- 55 C

Tradename :

HiPerFET

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Lead Free :

Lead Free

ECCN Code :

EAR99

Number of Elements :

1

Transistor Polarity :

N-Channel

Reach Compliance Code :

Compliant

Pin Count :

3

Terminal Form :

THROUGH-HOLE

Vgs (Max) :

±30V

Package Shape :

RECTANGULAR

Drain Current-Max (Abs) (ID) :

10 A

Resistance :

740mOhm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminals :

3

DS Breakdown Voltage-Min :

600 V

Terminal Position :

Single

FET Type :

N-Channel

Number of Terminations :

3

Continuous Drain Current (ID) :

10A

Transistor Application :

SWITCHING

Series :

HiPerFET™, PolarP2™

Input Capacitance (Ciss) (Max) @ Vds :

1610pF @ 25V

Manufacturer :

IXYS

Surface Mount :

No

Terminal Finish :

Pure Tin (Sn)

Supplier Device Package :

TO-220AB

Rds On (Max) @ Id, Vgs :

740m Ω @ 5A, 10V

Transistor Type :

1 N-Channel

Number of Channels :

1 Channel

Power Dissipation :

200W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Product Category :

MOSFET

Width :

4.83mm

Rise Time :

27ns

Element Configuration :

Single

Length :

10.66mm

Maximum Operating Temperature :

+ 150 C

Published :

2004

Packaging :

Tube

Product Type :

MOSFET

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

26 Weeks

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Product Status :

Active

Mounting Type :

Through Hole

Power Dissipation-Max :

200W Tc

Drain to Source Breakdown Voltage :

600V

Qualification Status :

Not Qualified

Channel Mode :

Enhancement

Vgs(th) (Max) @ Id :

5.5V @ 1mA

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Current Rating :

10A

Power Dissipation-Max (Abs) :

200 W

RoHS :

Details

Package :

Tube

Power Dissipation (Max) :

200W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

21 ns

Voltage - Rated DC :

600V

Threshold Voltage :

5.5V

Pulsed Drain Current-Max (IDM) :

25A

Pbfree Code :

yes

Mounting Style :

Through Hole

Number of Pins :

3