IXFP12N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Height :

9.15mm

Rds On (Max) @ Id, Vgs :

500m Ω @ 6A, 10V

Power Dissipation-Max :

200W Tc

Turn On Delay Time :

22 ns

Number of Elements per Chip :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Product Type :

MOSFET

Vgs (Max) :

±30V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

30 A

Minimum Operating Temperature :

-55 °C

Drain-source On Resistance-Max :

0.5Ohm

Brand :

IXYS

Rise Time :

27ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

MSL :

MSL 1 - Unlimited

JESD-609 Code :

e3

Factory Lead Time :

26 Weeks

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Power Dissipation (Max) :

200W (Tc)

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Current Rating :

12A

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Package :

Tube

Number of Pins :

3

Mount :

Through Hole

Vgs(th) (Max) @ Id :

5.5V @ 1mA

Transistor Application :

SWITCHING

Published :

2006

Transistor Type :

1 N-Channel

Length :

10.66mm

Mounting Style :

Through Hole

Channel Mode :

Enhancement

RoHS Status :

ROHS3 Compliant

Transistor Polarity :

N-Channel

Avalanche Energy Rating (Eas) :

600 mJ

Power Dissipation :

200W

Reach Compliance Code :

Compliant

Tradename :

HiPerFET

Pin Count :

3

FET Type :

N-Channel

Continuous Drain Current (ID) :

12A

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

500V

Case Connection :

DRAIN

Voltage - Rated DC :

500V

Supplier Device Package :

TO-220AB

Package Type :

TO-220

Qualification Status :

Not Qualified

Package Shape :

RECTANGULAR

Fall Time (Typ) :

20 ns

Surface Mount :

No

Mounting Type :

Through Hole

Qualification :

-

DS Breakdown Voltage-Min :

500 V

Package / Case :

TO-220-3

Number of Terminals :

3

Base Product Number :

IXFP12

JEDEC-95 Code :

TO-220AB

Product Status :

Active

Drain to Source Voltage (Vdss) :

500V

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current Id :

12A

Width :

4.83mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Packaging :

Tube

Pbfree Code :

yes

Radiation Hardening :

No

Configuration :

Single

Lead Free :

Lead Free

Turn-Off Delay Time :

65 ns

Channel Type :

N

Terminal Form :

THROUGH-HOLE

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max (Abs) :

200 W

Drain Current-Max (Abs) (ID) :

12 A

Product Category :

MOSFET

FET Feature :

--

Maximum Operating Temperature :

+150 °C

Number of Channels :

1 Channel

RoHS :

Details

Element Configuration :

Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™, PolarP2™