IXFP10N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Reach Compliance Code :

Compliant

Number of Channels :

1 Channel

Published :

2005

Transistor Type :

1 N-Channel

FET Feature :

--

Package Shape :

RECTANGULAR

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

1.1 Ω @ 5A, 10V

Manuf. code :

IXY

Mounting Style :

Through Hole

Packaging :

Tube

Drain-source On Resistance-Max :

1.1 Ω

Height :

9.15mm

Number of Terminals :

3

Content :

1pc(s)

Channels :

1

Power Dissipation (Max) :

300W (Tc)

Factory Lead Time :

26 Weeks

Pbfree Code :

yes

Turn On Delay Time :

21 ns

Vgs (Max) :

±30V

Surface Mount :

yes

Case Connection :

DRAIN

Mount :

Through Hole

Power Dissipation-Max (Abs) :

300 W

JESD-30 Code :

R-PSSO-G3

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

10A

Configuration :

Single

Number of Elements :

1

Rise Time :

22ns

Package Type :

TO-220

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

30 A

Channel Type :

N

Manufacturer :

IXYS

Power Dissipation :

300W

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

10 A

Terminal Position :

Single

Channel Mode :

Enhancement

Turn-Off Delay Time :

62 ns

Product Category :

MOSFET

Package :

Tube

Type :

N-Channel

DS Breakdown Voltage-Min :

800 V

Power (max) P(TOT) :

300W

Width :

4.83mm

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Product Status :

Active

Gate to Source Voltage (Vgs) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Maximum Operating Temperature :

+150 °C

Minimum Operating Temperature :

-55 °C

RoHS :

Details

Number of Elements per Chip :

1

Qualification Status :

Not Qualified

Power Dissipation-Max :

300W Tc

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Series :

HiPerFET™, PolarHT™

Brand :

IXYS

Length :

10.66mm

Transistor Polarity :

N-Channel

Product Type :

MOSFET

FET Type :

N-Channel

Tradename :

HiPerFET

Enclosure :

TO 220AB

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

800V

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Avalanche Energy Rating (Eas) :

600 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max. operating temperature :

+150°C

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

5.5V @ 2.5mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXFP10

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 25V

Fall Time (Typ) :

22 ns

Supplier Device Package :

TO-220AB

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON