IXFP102N15T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

5220pF @ 25V

Rds On (Max) @ Id, Vgs :

18m Ω @ 500mA, 10V

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.018Ohm

Continuous Drain Current (ID) :

102A

Power Dissipation-Max :

455W Tc

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Product Type :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Package :

Tube

Number of Terminations :

3

Factory Lead Time :

26 Weeks

Package Shape :

RECTANGULAR

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

300A

Mounting Type :

Through Hole

Published :

2009

Additional Feature :

AVALANCHE RATED

FET Feature :

--

Product Status :

Active

Reach Compliance Code :

Compliant

Pbfree Code :

yes

Rds On Max :

18 mΩ

Product Category :

MOSFET

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Tradename :

HiPerFET

Base Product Number :

IXFP102

Series :

HiPerFET™

Case Connection :

DRAIN

Number of Terminals :

3

Avalanche Energy Rating (Eas) :

750 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Mounting Style :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

150V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS :

Details

Transistor Polarity :

N-Channel

Brand :

IXYS

Terminal Position :

Single

DS Breakdown Voltage-Min :

150V

Terminal Form :

THROUGH-HOLE

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Manufacturer :

IXYS

Supplier Device Package :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

102A Tc

Input Capacitance :

5.22 nF

Vgs(th) (Max) @ Id :

5V @ 1mA

Power Dissipation-Max (Abs) :

455 W

Max Power Dissipation :

455 W

Drain Current-Max (Abs) (ID) :

102 A

FET Type :

N-Channel

Power Dissipation (Max) :

455W (Tc)

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e1