IXFP130N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Reach Compliance Code :

Compliant

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Mounting Type :

Through Hole

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Product Category :

MOSFET

Transistor Application :

SWITCHING

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Vgs (Max) :

--

Mount :

Through Hole

Brand :

IXYS

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Number of Terminations :

3

FET Feature :

--

Avalanche Energy Rating (Eas) :

750 mJ

Mounting Style :

Through Hole

Manufacturer :

IXYS

Package Shape :

RECTANGULAR

Continuous Drain Current (ID) :

130A

Rds On Max :

9.1 mΩ

RoHS :

Details

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Base Product Number :

IXFP130

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 25V

Input Capacitance :

5.08 nF

Operating Temperature :

-55°C~175°C TJ

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Packaging :

Tube

Surface Mount :

No

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Power Dissipation-Max (Abs) :

360 W

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Pbfree Code :

yes

Terminal Position :

Single

Series :

TrenchMV™

Max Power Dissipation :

360 W

Power Dissipation-Max :

360W Tc

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package :

Tube

Supplier Device Package :

TO-220AB

Product Type :

MOSFET

Drain-source On Resistance-Max :

0.0091Ohm

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

100V

Pulsed Drain Current-Max (IDM) :

350A

Number of Terminals :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Product Status :

Active

Tradename :

HiPerFET

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Power Dissipation (Max) :

360W (Tc)

Drain Current-Max (Abs) (ID) :

130 A