IXFP130N10T

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Number of Elements :

1

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

130A Tc

Number of Terminals :

3

RoHS :

Details

FET Feature :

--

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Brand :

IXYS

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

104nC @ 10V

Mounting Style :

Through Hole

Drain-source On Resistance-Max :

0.0091Ohm

Product Category :

MOSFET

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

130A

Operating Temperature :

-55°C~175°C TJ

Package Shape :

RECTANGULAR

Packaging :

Tube

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Case Connection :

DRAIN

Max Power Dissipation :

360 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

350A

Product Type :

MOSFET

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Published :

2008

Transistor Polarity :

N-Channel

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

5080pF @ 25V

Terminal Form :

THROUGH-HOLE

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package :

Tube

Base Product Number :

IXFP130

FET Type :

N-Channel

Series :

TrenchMV™

Supplier Device Package :

TO-220AB

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

3

Drain Current-Max (Abs) (ID) :

130 A

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On Max :

9.1 mΩ

Product Status :

Active

Surface Mount :

No

Vgs (Max) :

--

DS Breakdown Voltage-Min :

100V

Pin Count :

3

Qualification Status :

Not Qualified

Power Dissipation-Max (Abs) :

360 W

Avalanche Energy Rating (Eas) :

750 mJ

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 25A, 10V

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Input Capacitance :

5.08 nF

Polarity/Channel Type :

N-Channel

Power Dissipation-Max :

360W Tc

Manufacturer :

IXYS

Power Dissipation (Max) :

360W (Tc)

Tradename :

HiPerFET