IXFP8N50P3
- Mfr.Part #
- IXFP8N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 8A TO220AB
- Stock
- 31,774
- In Stock :
- 31,774
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Drain to Source Resistance :
- 800 mΩ
- Drain to Source Voltage (Vdss) :
- 500V
- Input Capacitance :
- 705 pF
- Rds On (Max) @ Id, Vgs :
- 800m Ω @ 4A, 10V
- Configuration :
- Single
- Length :
- 10.66mm
- Series :
- HiPerFET™, Polar3™
- Number of Pins :
- 3
- Published :
- 2013
- Turn On Delay Time :
- 13 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 705pF @ 25V
- Height :
- 16mm
- Power Dissipation-Max :
- 180W Tc
- Max Power Dissipation :
- 180 W
- Continuous Drain Current (ID) :
- 8A
- Gate Charge (Qg) (Max) @ Vgs :
- 13nC @ 10V
- Element Configuration :
- Single
- Factory Lead Time :
- 24 Weeks
- Vgs(th) (Max) @ Id :
- 5V @ 1.5mA
- Product Status :
- Active
- Package :
- Tube
- Power Dissipation-Max (Abs) :
- 180 W
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS Corporation
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXFP8N50
- Reach Compliance Code :
- Compliant
- Max Operating Temperature :
- 150 °C
- Surface Mount :
- No
- Polarity/Channel Type :
- N-Channel
- Min Operating Temperature :
- -55 °C
- Power Dissipation (Max) :
- 180W (Tc)
- Width :
- 4.83mm
- RoHS :
- Compliant
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- --
- Turn-On Delay Time :
- 13 ns
- Turn-Off Delay Time :
- 29 ns
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Rds On Max :
- 800 mΩ
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 8A Tc
- Drain Current-Max (Abs) (ID) :
- 8A
- Gate to Source Voltage (Vgs) :
- 30V
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Supplier Device Package :
- TO-220AB
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Datasheets
- IXFP8N50P3

N-Channel Tube 800m Ω @ 4A, 10V ±30V 705pF @ 25V 13nC @ 10V 500V TO-220-3
IXFP8N50P3 Overview
A device's maximal input capacitance is 705pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 8A, which represents the maximum continuous current it can conduct.In this device, the drain current is 8A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 29 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 800 mΩ.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFP8N50P3 Features
a continuous drain current (ID) of 8A
the turn-off delay time is 29 ns
single MOSFETs transistor is 800 mΩ
a 500V drain to source voltage (Vdss)
IXFP8N50P3 Applications
There are a lot of IXYS
IXFP8N50P3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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