IXFP7N80PM
- Mfr.Part #
- IXFP7N80PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 3.5A TO220AB
- Stock
- 14,713
- In Stock :
- 14,713
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 32 ns
- Package Shape :
- RECTANGULAR
- Package :
- Tube
- RoHS :
- Details
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Series :
- HiPerFET™, PolarHT™
- Subcategory :
- MOSFETs
- Tradename :
- HiPerFET
- Manufacturer :
- IXYS
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 50W
- Transistor Polarity :
- N-Channel
- Reach Compliance Code :
- Compliant
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 800V
- JESD-30 Code :
- R-PSFM-T3
- Channel Mode :
- Enhancement
- Minimum Operating Temperature :
- - 55 C
- Product Status :
- Active
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Transistor Type :
- 1 N-Channel
- Surface Mount :
- No
- Drain-source On Resistance-Max :
- 1.44 Ω
- Terminal Form :
- THROUGH-HOLE
- Element Configuration :
- Single
- Maximum Operating Temperature :
- + 150 C
- Product Category :
- MOSFET
- Qualification Status :
- Not Qualified
- Power Dissipation (Max) :
- 50W (Tc)
- Current - Continuous Drain (Id) @ 25°C :
- 3.5A Tc
- Continuous Drain Current (ID) :
- 3.5A
- Number of Channels :
- 1 Channel
- Published :
- 2006
- Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 800V
- Packaging :
- Tube
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-220-3
- DS Breakdown Voltage-Min :
- 800 V
- Width :
- 4.9 mm
- Additional Feature :
- AVALANCHE RATED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Brand :
- IXYS
- Supplier Device Package :
- TO-220AB
- JEDEC-95 Code :
- TO-220AB
- FET Feature :
- --
- Mount :
- Through Hole
- Product Type :
- MOSFET
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Height :
- 9.19 mm
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1890pF @ 25V
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 50W Tc
- Vgs(th) (Max) @ Id :
- 5V @ 1mA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 1.44 Ω @ 3.5A, 10V
- Base Product Number :
- IXFP7N80
- Turn-Off Delay Time :
- 55 ns
- Number of Terminals :
- 3
- FET Type :
- N-Channel
- Length :
- 10.36 mm
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Pin Count :
- 3
- Number of Terminations :
- 3
- Terminal Position :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Datasheets
- IXFP7N80PM

N-Channel Tube 1.44 Ω @ 3.5A, 10V ±30V 1890pF @ 25V 32nC @ 10V 800V TO-220-3
IXFP7N80PM Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1890pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.5A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFP7N80PM Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 55 ns
a 800V drain to source voltage (Vdss)
IXFP7N80PM Applications
There are a lot of IXYS
IXFP7N80PM applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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