IXFP7N80PM

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Mfr.Part #
IXFP7N80PM
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 800V 3.5A TO220AB
Stock
14,713
In Stock :
14,713

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Power Dissipation :
50W
Number of Terminations :
3
Mounting Style :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
1890pF @ 25V
FET Type :
N-Channel
Mounting Type :
Through Hole
Pbfree Code :
yes
Number of Channels :
1 Channel
Package :
Tube
Minimum Operating Temperature :
- 55 C
Reach Compliance Code :
Compliant
Vgs(th) (Max) @ Id :
5V @ 1mA
JEDEC-95 Code :
TO-220AB
Terminal Finish :
Matte Tin (Sn)
Published :
2006
FET Feature :
--
Channel Mode :
Enhancement
Terminal Form :
THROUGH-HOLE
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Drain-source On Resistance-Max :
1.44 Ω
Width :
4.9 mm
Tradename :
HiPerFET
Turn-Off Delay Time :
55 ns
Power Dissipation (Max) :
50W (Tc)
Drain to Source Breakdown Voltage :
800V
Avalanche Energy Rating (Eas) :
300 mJ
Brand :
IXYS
Operating Mode :
ENHANCEMENT MODE
Transistor Application :
SWITCHING
Transistor Polarity :
N-Channel
Package Shape :
RECTANGULAR
RoHS Status :
ROHS3 Compliant
Product Category :
MOSFET
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
HiPerFET™, PolarHT™
Base Product Number :
IXFP7N80
Product Status :
Active
Rise Time :
32 ns
Polarity/Channel Type :
N-Channel
Package / Case :
TO-220-3
Terminal Position :
Single
Height :
9.19 mm
Length :
10.36 mm
Vgs (Max) :
±30V
JESD-609 Code :
e3
JESD-30 Code :
R-PSFM-T3
Power Dissipation-Max :
50W Tc
Number of Terminals :
3
Additional Feature :
AVALANCHE RATED
Pin Count :
3
DS Breakdown Voltage-Min :
800 V
Maximum Operating Temperature :
+ 150 C
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
RoHS :
Details
Product Type :
MOSFET
Supplier Device Package :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
3.5A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Type :
1 N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tube
Qualification Status :
Not Qualified
Rds On (Max) @ Id, Vgs :
1.44 Ω @ 3.5A, 10V
Number of Elements :
1
Manufacturer :
IXYS
Surface Mount :
No
Continuous Drain Current (ID) :
3.5A
Mount :
Through Hole
Case Connection :
Isolated
Transistor Element Material :
SILICON
Configuration :
Single
Drain to Source Voltage (Vdss) :
800V
Subcategory :
MOSFETs
Datasheets
IXFP7N80PM
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP7N80PM from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IXFP7N80PM pinout, IXFP7N80PM datasheet PDF, IXFP7N80PM amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP7N80PM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP7N80PM


N-Channel Tube 1.44 Ω @ 3.5A, 10V ±30V 1890pF @ 25V 32nC @ 10V 800V TO-220-3

IXFP7N80PM Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1890pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 3.5A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.The DS breakdown voltage should be maintained above 800 V to maintain normal operation.To operate this transistor, you will need a 800V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFP7N80PM Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 3.5A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 55 ns
a 800V drain to source voltage (Vdss)


IXFP7N80PM Applications


There are a lot of IXYS
IXFP7N80PM applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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