IXFP7N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

32ns

Lead Free :

Lead Free

Power Dissipation-Max :

200W Tc

Polarity/Channel Type :

N-Channel

Number of Channels :

1 Channel

Width :

4.83mm

Continuous Drain Current (ID) :

7A

Terminal Finish :

Pure Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Drain to Source Voltage (Vdss) :

800V

Mounting Type :

Through Hole

Power Dissipation-Max (Abs) :

200 W

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Product Status :

Active

Drain to Source Breakdown Voltage :

800V

Package Shape :

RECTANGULAR

Maximum Operating Temperature :

+150 °C

Published :

2006

Pbfree Code :

yes

Channel Type :

N

Avalanche Energy Rating (Eas) :

300 mJ

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Operating Temperature :

-55°C~150°C TJ

Height :

9.15mm

Transistor Element Material :

SILICON

Configuration :

Single

Case Connection :

DRAIN

Drain-source On Resistance-Max :

1.44 Ω

Product Category :

MOSFET

Series :

HiPerFET™, PolarHT™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Tradename :

HiPerFET

Power Dissipation (Max) :

200W (Tc)

Manufacturer :

IXYS

Channel Mode :

Enhancement

Type :

Polar HiPerFET Power MOSFET

Factory Lead Time :

26 Weeks

Power Dissipation :

200W

Base Product Number :

IXFP7N80

Surface Mount :

No

Pin Count :

3

RoHS :

Details

Pulsed Drain Current-Max (IDM) :

18A

Number of Terminations :

3

Turn On Delay Time :

28 ns

Number of Elements per Chip :

1

Number of Elements :

1

Transistor Type :

1 N-Channel

Supplier Device Package :

TO-220AB

FET Feature :

-

Reach Compliance Code :

Compliant

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

30V

Package :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 25V

Product Type :

MOSFET

Length :

10.66mm

DS Breakdown Voltage-Min :

800 V

Mounting Style :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Type :

TO-220

Qualification Status :

Not Qualified

Fall Time (Typ) :

24 ns

JEDEC-95 Code :

TO-220AB

Brand :

IXYS

FET Type :

N-Channel

Minimum Operating Temperature :

-55 °C

Turn-Off Delay Time :

55 ns

Mount :

Through Hole

Element Configuration :

Single

Number of Pins :

3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 1mA

Drain Current-Max (Abs) (ID) :

7A

Rds On (Max) @ Id, Vgs :

1.44 Ω @ 3.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Package / Case :

TO-220-3

Transistor Polarity :

N-Channel

Packaging :

Tube

Terminal Position :

Single

Vgs (Max) :

±30V