IXFP7N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

705pF @ 25V

Number of Terminals :

3

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Reach Compliance Code :

Compliant

Additional Feature :

AVALANCHE RATED

Terminal Form :

THROUGH-HOLE

Case Connection :

DRAIN

Manufacturer :

IXYS Corporation

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

24 Weeks

Series :

HiPerFET™

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

7A

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

13.3nC @ 10V

Number of Terminations :

3

Power Dissipation-Max (Abs) :

180 W

Vgs (Max) :

±30V

Packaging :

Tube

Package :

Tube

Surface Mount :

No

Power Dissipation-Max :

180W Tc

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

16A

Pin Count :

3

Rds On (Max) @ Id, Vgs :

1.15 Ω @ 500mA, 10V

Continuous Drain Current (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

5V @ 1mA

Supplier Device Package :

TO-220AB

Base Product Number :

IXFP7N60

Drain-source On Resistance-Max :

1.15 Ω

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

400 mJ

Power Dissipation (Max) :

180W (Tc)

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Number of Elements :

1

Product Status :

Active