IXFP7N100P
- Mfr.Part #
- IXFP7N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 7A TO220AB
- Stock
- 23,948
- In Stock :
- 23,948
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 1000V
- Continuous Drain Current (ID) :
- 7A
- RoHS :
- Details
- Number of Elements :
- 1
- Brand :
- IXYS
- Pin Count :
- 3
- Additional Feature :
- AVALANCHE RATED
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Package Shape :
- RECTANGULAR
- Qualification Status :
- Not Qualified
- Supplier Device Package :
- TO-220AB
- Power Dissipation-Max (Abs) :
- 300 W
- Gate to Source Voltage (Vgs) :
- 30V
- Surface Mount :
- No
- Manuf. code :
- IXY
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 300W (Tc)
- Package :
- Tube
- Element Configuration :
- Single
- Power Dissipation-Max :
- 300W Tc
- Max. operating temperature :
- +150°C
- Product Type :
- MOSFET
- Vgs (Max) :
- ±30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Product Category :
- MOSFET
- Enclosure :
- TO 220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Drain Current-Max (Abs) (ID) :
- 7A
- Published :
- 2012
- Mounting Style :
- Through Hole
- FET Type :
- N-Channel
- Packaging :
- Tube
- Number of Pins :
- 3
- Tradename :
- HiPerFET
- Transistor Polarity :
- N-Channel
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Base Product Number :
- IXFP7N100
- Vgs(th) (Max) @ Id :
- 6V @ 1mA
- Power (max) P(TOT) :
- 300W
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 1.9 Ω
- Polarity/Channel Type :
- N-Channel
- Manufacturer :
- IXYS
- Reach Compliance Code :
- Compliant
- Type :
- N-Channel
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 1.9 Ω @ 3.5A, 10V
- Drain to Source Breakdown Voltage :
- 1kV
- Number of Terminals :
- 3
- Number of Channels :
- 1 Channel
- Content :
- 1pc(s)
- DS Breakdown Voltage-Min :
- 1000 V
- Transistor Type :
- 1 N-Channel
- Factory Lead Time :
- 26 Weeks
- Package / Case :
- TO-220-3
- Power Dissipation :
- 300W
- Minimum Operating Temperature :
- - 55 C
- Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Single
- Maximum Operating Temperature :
- + 150 C
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Pulsed Drain Current-Max (IDM) :
- 18A
- FET Feature :
- --
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 2590pF @ 25V
- Transistor Application :
- SWITCHING
- Terminal Form :
- THROUGH-HOLE
- Channels :
- 1
- Series :
- HiPerFET™, PolarP2™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IXFP7N100P

N-Channel Tube 1.9 Ω @ 3.5A, 10V ±30V 2590pF @ 25V 47nC @ 10V 1000V TO-220-3
IXFP7N100P Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 2590pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 18A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFP7N100P Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 18A.
a 1000V drain to source voltage (Vdss)
IXFP7N100P Applications
There are a lot of IXYS
IXFP7N100P applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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