IXFP7N100P

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Mfr.Part #
IXFP7N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 7A TO220AB
Stock
23,948
In Stock :
23,948

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
1000V
Continuous Drain Current (ID) :
7A
RoHS :
Details
Number of Elements :
1
Brand :
IXYS
Pin Count :
3
Additional Feature :
AVALANCHE RATED
Transistor Element Material :
SILICON
Mount :
Through Hole
Lead Free :
Lead Free
Operating Mode :
ENHANCEMENT MODE
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Supplier Device Package :
TO-220AB
Power Dissipation-Max (Abs) :
300 W
Gate to Source Voltage (Vgs) :
30V
Surface Mount :
No
Manuf. code :
IXY
Case Connection :
DRAIN
JESD-30 Code :
R-PSFM-T3
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation (Max) :
300W (Tc)
Package :
Tube
Element Configuration :
Single
Power Dissipation-Max :
300W Tc
Max. operating temperature :
+150°C
Product Type :
MOSFET
Vgs (Max) :
±30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Product Category :
MOSFET
Enclosure :
TO 220AB
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Drain Current-Max (Abs) (ID) :
7A
Published :
2012
Mounting Style :
Through Hole
FET Type :
N-Channel
Packaging :
Tube
Number of Pins :
3
Tradename :
HiPerFET
Transistor Polarity :
N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Base Product Number :
IXFP7N100
Vgs(th) (Max) @ Id :
6V @ 1mA
Power (max) P(TOT) :
300W
Mounting Type :
Through Hole
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Status :
Active
Pbfree Code :
yes
Drain-source On Resistance-Max :
1.9 Ω
Polarity/Channel Type :
N-Channel
Manufacturer :
IXYS
Reach Compliance Code :
Compliant
Type :
N-Channel
JEDEC-95 Code :
TO-220AB
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3.5A, 10V
Drain to Source Breakdown Voltage :
1kV
Number of Terminals :
3
Number of Channels :
1 Channel
Content :
1pc(s)
DS Breakdown Voltage-Min :
1000 V
Transistor Type :
1 N-Channel
Factory Lead Time :
26 Weeks
Package / Case :
TO-220-3
Power Dissipation :
300W
Minimum Operating Temperature :
- 55 C
Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
Single
Maximum Operating Temperature :
+ 150 C
Avalanche Energy Rating (Eas) :
300 mJ
Pulsed Drain Current-Max (IDM) :
18A
FET Feature :
--
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
2590pF @ 25V
Transistor Application :
SWITCHING
Terminal Form :
THROUGH-HOLE
Channels :
1
Series :
HiPerFET™, PolarP2™
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IXFP7N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP7N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Type:N-Channel, Number of Channels:1 Channel, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, IXFP7N100P pinout, IXFP7N100P datasheet PDF, IXFP7N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP7N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP7N100P


N-Channel Tube 1.9 Ω @ 3.5A, 10V ±30V 2590pF @ 25V 47nC @ 10V 1000V TO-220-3

IXFP7N100P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 2590pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 18A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFP7N100P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 18A.
a 1000V drain to source voltage (Vdss)


IXFP7N100P Applications


There are a lot of IXYS
IXFP7N100P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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