IXFP7N100P

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Mfr.Part #
IXFP7N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 7A TO220AB
Stock
23,948
In Stock :
23,948

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Factory Lead Time :
26 Weeks
Number of Terminals :
3
Pulsed Drain Current-Max (IDM) :
18A
FET Feature :
--
Element Configuration :
Single
Product Type :
MOSFET
Vgs(th) (Max) @ Id :
6V @ 1mA
Manufacturer :
IXYS
Type :
N-Channel
Number of Terminations :
3
Number of Channels :
1 Channel
Supplier Device Package :
TO-220AB
Tradename :
HiPerFET
Channels :
1
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Mount :
Through Hole
Surface Mount :
No
Input Capacitance (Ciss) (Max) @ Vds :
2590pF @ 25V
Transistor Polarity :
N-Channel
Vgs (Max) :
±30V
Published :
2012
Drain-source On Resistance-Max :
1.9 Ω
Package / Case :
TO-220-3
Case Connection :
DRAIN
Pbfree Code :
yes
DS Breakdown Voltage-Min :
1000 V
Rds On (Max) @ Id, Vgs :
1.9 Ω @ 3.5A, 10V
RoHS Status :
ROHS3 Compliant
Avalanche Energy Rating (Eas) :
300 mJ
Power (max) P(TOT) :
300W
Number of Elements :
1
Packaging :
Tube
Operating Temperature :
-55°C~150°C TJ
Maximum Operating Temperature :
+ 150 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
Compliant
FET Type :
N-Channel
Power Dissipation-Max (Abs) :
300 W
Polarity/Channel Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Power Dissipation (Max) :
300W (Tc)
Transistor Element Material :
SILICON
Terminal Form :
THROUGH-HOLE
Drive Voltage (Max Rds On,Min Rds On) :
10V
Brand :
IXYS
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Breakdown Voltage :
1kV
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
7A
Gate to Source Voltage (Vgs) :
30V
Transistor Type :
1 N-Channel
Series :
HiPerFET™, PolarP2™
Operating Mode :
ENHANCEMENT MODE
RoHS :
Details
Max. operating temperature :
+150°C
Transistor Application :
SWITCHING
Package Shape :
RECTANGULAR
Product Category :
MOSFET
Content :
1pc(s)
Minimum Operating Temperature :
- 55 C
Drain to Source Voltage (Vdss) :
1000V
Enclosure :
TO 220AB
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Lead Free :
Lead Free
Package :
Tube
Additional Feature :
AVALANCHE RATED
Manuf. code :
IXY
Mounting Style :
Through Hole
Number of Pins :
3
Qualification Status :
Not Qualified
Continuous Drain Current (ID) :
7A
Product Status :
Active
Configuration :
Single
Power Dissipation :
300W
Power Dissipation-Max :
300W Tc
Base Product Number :
IXFP7N100
Datasheets
IXFP7N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP7N100P from Chip IC,where excellence meets affordability. This product stands out with its Type:N-Channel, Number of Terminations:3, Number of Channels:1 Channel, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, IXFP7N100P pinout, IXFP7N100P datasheet PDF, IXFP7N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP7N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP7N100P


N-Channel Tube 1.9 Ω @ 3.5A, 10V ±30V 2590pF @ 25V 47nC @ 10V 1000V TO-220-3

IXFP7N100P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 300 mJ.A device's maximal input capacitance is 2590pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 7A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 1kV and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 7A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 18A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 1000 V.This transistor requires a 1000V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFP7N100P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 1kV voltage
based on its rated peak drain current 18A.
a 1000V drain to source voltage (Vdss)


IXFP7N100P Applications


There are a lot of IXYS
IXFP7N100P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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