IXFP76N15T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package :

Tube

Mounting Style :

Through Hole

Height :

16 mm

Power Dissipation-Max (Abs) :

350 W

Transistor Polarity :

N-Channel

Number of Terminals :

3

Additional Feature :

AVALANCHE RATED

Package Shape :

RECTANGULAR

Max Power Dissipation :

350 W

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 250μA

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

150V

Power Dissipation-Max :

350W Tc

JESD-30 Code :

R-PSFM-T3

Tradename :

HiPerFET

Number of Channels :

1 Channel

Avalanche Energy Rating (Eas) :

500 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

350W (Tc)

Channel Mode :

Enhancement

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

97nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.83 mm

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Base Product Number :

IXFP76

Series :

HiPerFET™, TrenchT2™

Pbfree Code :

yes

Rds On Max :

20 mΩ

Maximum Operating Temperature :

+ 175 C

Number of Elements :

1

Product Category :

MOSFET

Length :

10.66 mm

DS Breakdown Voltage-Min :

150V

Brand :

IXYS

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

76 A

Configuration :

SINGLE WITH BUILT-IN DIODE

Manufacturer :

IXYS

RoHS :

Details

Factory Lead Time :

26 Weeks

Terminal Form :

THROUGH-HOLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Package / Case :

TO-220-3

Input Capacitance :

5.8 nF

Published :

2009

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.02Ohm

Packaging :

Tube

Mount :

Through Hole

Continuous Drain Current (ID) :

76A

Supplier Device Package :

TO-220AB

Transistor Application :

SWITCHING

Polarity/Channel Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5800pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

76A Tc

FET Feature :

--

Mounting Type :

Through Hole

Product Status :

Active

Surface Mount :

No

Type :

TrenchT2 HiperFET Power MOSFET

Pulsed Drain Current-Max (IDM) :

200A

Rds On (Max) @ Id, Vgs :

20m Ω @ 38A, 10V

Transistor Element Material :

SILICON

Rise Time :

19 ns

Terminal Position :

Single

Pin Count :

3

FET Type :

N-Channel