IXFP5N50PM

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Mfr.Part #
IXFP5N50PM
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 3.2A TO220AB
Stock
4,146
In Stock :
4,146

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Continuous Drain Current (ID) :
3.2A
Drain to Source Resistance :
1.4 Ω
Manufacturer :
IXYS Corporation
Mount :
Through Hole
Transistor Application :
SWITCHING
Published :
2006
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Fall Time (Typ) :
26 ns
RoHS :
Compliant
Terminal Finish :
Matte Tin (Sn)
JESD-30 Code :
R-PSFM-T3
Gate to Source Voltage (Vgs) :
30V
FET Feature :
--
Gate Charge (Qg) (Max) @ Vgs :
12.6nC @ 10V
RoHS Status :
RoHS Compliant
Avalanche Energy Rating (Eas) :
150 mJ
Input Capacitance (Ciss) (Max) @ Vds :
620pF @ 25V
Drain-source On Resistance-Max :
1.4 Ω
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
5.5V @ 500µA
JESD-609 Code :
e3
Element Configuration :
Single
Series :
HiPerFET™, PolarHT™
Rds On Max :
1.4 Ω
DS Breakdown Voltage-Min :
500 V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Package :
Tube
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
8 Weeks
Pulsed Drain Current-Max (IDM) :
10A
Number of Elements :
1
Package Shape :
RECTANGULAR
Base Product Number :
IXFP5N50
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Max Power Dissipation :
38 W
Packaging :
Tube
Terminal Form :
THROUGH-HOLE
Case Connection :
Isolated
Drain to Source Voltage (Vdss) :
500V
Package / Case :
TO-220-3
Configuration :
SINGLE WITH BUILT-IN DIODE
Additional Feature :
AVALANCHE RATED
Pbfree Code :
yes
Min Operating Temperature :
-55 °C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
150 °C
Power Dissipation-Max :
38W Tc
Pin Count :
3
Polarity/Channel Type :
N-Channel
Terminal Position :
Single
Current - Continuous Drain (Id) @ 25°C :
3.2A Tc
Supplier Device Package :
TO-220AB
Number of Terminals :
3
Drain to Source Breakdown Voltage :
500V
Turn-Off Delay Time :
65 ns
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 2.5A, 10V
Surface Mount :
No
Power Dissipation (Max) :
38W (Tc)
Input Capacitance :
620 pF
Product Status :
Obsolete
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Rise Time :
28ns
Qualification Status :
Not Qualified
Power Dissipation :
38W
Vgs (Max) :
±30V
Reach Compliance Code :
Compliant
Datasheets
IXFP5N50PM
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP5N50PM from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Mounting Type:Through Hole, IXFP5N50PM pinout, IXFP5N50PM datasheet PDF, IXFP5N50PM amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP5N50PM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP5N50PM


N-Channel Tube 1.4 Ω @ 2.5A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-220-3

IXFP5N50PM Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 620pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 10A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.4 Ω.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IXFP5N50PM Features


the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
single MOSFETs transistor is 1.4 Ω
a 500V drain to source voltage (Vdss)


IXFP5N50PM Applications


There are a lot of IXYS
IXFP5N50PM applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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