IXFP5N50PM
- Mfr.Part #
- IXFP5N50PM
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 3.2A TO220AB
- Stock
- 4,146
- In Stock :
- 4,146
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 3.2A
- Drain to Source Resistance :
- 1.4 Ω
- Manufacturer :
- IXYS Corporation
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Fall Time (Typ) :
- 26 ns
- RoHS :
- Compliant
- Terminal Finish :
- Matte Tin (Sn)
- JESD-30 Code :
- R-PSFM-T3
- Gate to Source Voltage (Vgs) :
- 30V
- FET Feature :
- --
- Gate Charge (Qg) (Max) @ Vgs :
- 12.6nC @ 10V
- RoHS Status :
- RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 620pF @ 25V
- Drain-source On Resistance-Max :
- 1.4 Ω
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5.5V @ 500µA
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Series :
- HiPerFET™, PolarHT™
- Rds On Max :
- 1.4 Ω
- DS Breakdown Voltage-Min :
- 500 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Package :
- Tube
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 8 Weeks
- Pulsed Drain Current-Max (IDM) :
- 10A
- Number of Elements :
- 1
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFP5N50
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 38 W
- Packaging :
- Tube
- Terminal Form :
- THROUGH-HOLE
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 500V
- Package / Case :
- TO-220-3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Additional Feature :
- AVALANCHE RATED
- Pbfree Code :
- yes
- Min Operating Temperature :
- -55 °C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 150 °C
- Power Dissipation-Max :
- 38W Tc
- Pin Count :
- 3
- Polarity/Channel Type :
- N-Channel
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 3.2A Tc
- Supplier Device Package :
- TO-220AB
- Number of Terminals :
- 3
- Drain to Source Breakdown Voltage :
- 500V
- Turn-Off Delay Time :
- 65 ns
- Number of Terminations :
- 3
- Rds On (Max) @ Id, Vgs :
- 1.4 Ω @ 2.5A, 10V
- Surface Mount :
- No
- Power Dissipation (Max) :
- 38W (Tc)
- Input Capacitance :
- 620 pF
- Product Status :
- Obsolete
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 28ns
- Qualification Status :
- Not Qualified
- Power Dissipation :
- 38W
- Vgs (Max) :
- ±30V
- Reach Compliance Code :
- Compliant
- Datasheets
- IXFP5N50PM

N-Channel Tube 1.4 Ω @ 2.5A, 10V ±30V 620pF @ 25V 12.6nC @ 10V 500V TO-220-3
IXFP5N50PM Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 620pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 65 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 10A, its maximum pulsed drain current.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 1.4 Ω.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In order for DS breakdown voltage to remain above 500 V, it should remain above the 500 V level.The transistor must receive a 500V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IXFP5N50PM Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 3.2A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 10A.
single MOSFETs transistor is 1.4 Ω
a 500V drain to source voltage (Vdss)
IXFP5N50PM Applications
There are a lot of IXYS
IXFP5N50PM applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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