IXFP5N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification :

-

Input Capacitance :

1.83 nF

Power Dissipation (Max) :

250W (Tc)

Continuous Drain Current (ID) :

5A

Base Product Number :

IXFP5N100

Min Operating Temperature :

-55 °C

Number of Terminations :

3

Vgs (Max) :

±30V

Series :

HiPerFET™, PolarP2™

Terminal Position :

Single

Case Connection :

DRAIN

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Product Type :

MOSFET

Drain to Source Resistance :

2.8 Ω

Packaging :

Tube

Drain to Source Voltage (Vdss) :

1000V

Brand :

IXYS

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Mounting Style :

Through Hole

Package / Case :

TO-220-3

Number of Channels :

1 Channel

Terminal Form :

THROUGH-HOLE

Gate Charge (Qg) (Max) @ Vgs :

33.4nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Number of Elements :

1

Manufacturer :

IXYS

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

1 N-Channel

FET Feature :

-

Avalanche Energy Rating (Eas) :

300 mJ

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

5A

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

26 Weeks

Operating Mode :

ENHANCEMENT MODE

Polarity/Channel Type :

N-Channel

Channel Mode :

Enhancement

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

1000 V

Power Dissipation :

250W

Reach Compliance Code :

Compliant

Rds On Max :

2.8 Ω

Published :

2008

Lead Free :

Lead Free

Power Dissipation-Max :

250W Tc

Minimum Operating Temperature :

- 55 C

Vgs(th) (Max) @ Id :

6V @ 250μA

Transistor Polarity :

N-Channel

Radiation Hardening :

No

Product Status :

Active

Continuous Drain Current Id :

5A

Pbfree Code :

yes

Package :

Tube

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation-Max (Abs) :

250 W

Pin Count :

3

JESD-30 Code :

R-PSFM-T3

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

2.8 Ω

Pulsed Drain Current-Max (IDM) :

10 A

Drain to Source Breakdown Voltage :

1kV

Element Configuration :

Single

Supplier Device Package :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1830pF @ 25V

Maximum Operating Temperature :

+ 150 C

Additional Feature :

AVALANCHE RATED

Qualification Status :

Not Qualified

Tradename :

HiPerFET

Operating Temperature :

-55°C~150°C TJ

RoHS :

Details

JEDEC-95 Code :

TO-220AB

Number of Terminals :

3

Mounting Type :

Through Hole

Configuration :

Single

Product Category :

MOSFET

Max Power Dissipation :

250 W

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Max Operating Temperature :

150 °C

Channel Type :

N Channel

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 500mA, 10V