IXFP4N60P3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

24 Weeks

Packaging :

Tube

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Number of Elements :

1

Number of Channels :

1 Channel

Drain-source On Resistance-Max :

2.2 Ω

Element Configuration :

Single

Tradename :

HiPerFET

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXFP4N60

Configuration :

Single

Turn On Delay Time :

15 ns

DS Breakdown Voltage-Min :

600V

Width :

4.83mm

JESD-30 Code :

R-PSFM-T3

Transistor Polarity :

N-Channel

Product Type :

MOSFET

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

114W Tc

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

8A

FET Type :

N-Channel

Number of Pins :

3

Mounting Type :

Through Hole

Additional Feature :

AVALANCHE RATED

Mount :

Surface Mount, Through Hole

Terminal Position :

Single

Vgs (Max) :

±30V

Pin Count :

3

Length :

10.66mm

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Gate Charge (Qg) (Max) @ Vgs :

6.9nC @ 10V

Product Status :

Active

Transistor Application :

SWITCHING

Terminal Form :

THROUGH-HOLE

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

24 ns

Drain to Source Voltage (Vdss) :

600V

Channel Mode :

Enhancement

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS :

Details

Package :

Tube

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 2A, 10V

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max (Abs) :

114 W

Brand :

IXYS

Continuous Drain Current (ID) :

4A

Maximum Operating Temperature :

+ 150 C

Number of Terminals :

3

Power Dissipation (Max) :

114W (Tc)

Operating Temperature :

-55°C~150°C TJ

Mounting Style :

Through Hole

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

365pF @ 25V

Manufacturer :

IXYS

Package Shape :

RECTANGULAR

FET Feature :

--

Product Category :

MOSFET

Drain Current-Max (Abs) (ID) :

4A

Series :

HiPerFET™, Polar3™

Avalanche Energy Rating (Eas) :

200 mJ

Minimum Operating Temperature :

- 55 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-220AB

Height :

16mm