IXFP4N100Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2000

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

150W Tc

Number of Terminations :

3

Reach Compliance Code :

Compliant

Operating Temperature :

-55°C~150°C TJ

Package :

Tube

Power Dissipation-Max (Abs) :

150 W

Number of Pins :

3

REACH SVHC :

No SVHC

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Fall Time (Typ) :

18 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate to Source Voltage (Vgs) :

20V

Package Shape :

RECTANGULAR

Rise Time :

15ns

Drain to Source Voltage (Vdss) :

1000V

Supplier Device Package :

TO-220AB

Element Configuration :

Single

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Turn-Off Delay Time :

32 ns

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1050pF @ 25V

Mounting Type :

Through Hole

Base Product Number :

IXFP4N100

Surface Mount :

No

Packaging :

Tube

Package / Case :

TO-220-3

Terminal Position :

Single

Terminal Form :

THROUGH-HOLE

Threshold Voltage :

5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

HiPerFET™

Number of Terminals :

3

Number of Elements :

1

Factory Lead Time :

8 Weeks

Terminal Finish :

Pure Tin (Sn)

Vgs(th) (Max) @ Id :

5V @ 1.5mA

Power Dissipation :

150W

Product Status :

Not For New Designs

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

4A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Rds On (Max) @ Id, Vgs :

3 Ω @ 2A, 10V

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

700 mJ

DS Breakdown Voltage-Min :

1000 V

Manufacturer :

IXYS Corporation

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

4A

Radiation Hardening :

No

Drain-source On Resistance-Max :

3 Ω

Power Dissipation (Max) :

150W (Tc)

Drain to Source Breakdown Voltage :

1kV

Polarity/Channel Type :

N-Channel

Case Connection :

DRAIN

FET Feature :

--

Pulsed Drain Current-Max (IDM) :

16 A

Resistance :

3Ohm

FET Type :

N-Channel

Qualification Status :

Not Qualified