IXFP4N100P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Power Dissipation-Max (Abs) :

150 W

Factory Lead Time :

26 Weeks

Drain to Source Voltage (Vdss) :

1000V

Supplier Device Package :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Through Hole

Product Category :

MOSFET

JESD-30 Code :

R-PSFM-T3

Mounting Style :

Through Hole

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Minimum Operating Temperature :

- 55 C

Drain-source On Resistance-Max :

3.3 Ω

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

DS Breakdown Voltage-Min :

1000 V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

RoHS :

Details

Pulsed Drain Current-Max (IDM) :

8A

Drain Current-Max (Abs) (ID) :

4A

Terminal Form :

THROUGH-HOLE

Pin Count :

3

Input Capacitance :

1.456 nF

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 2A, 10V

Case Connection :

DRAIN

Max Power Dissipation :

150 W

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Tradename :

HiPerFET

Manufacturer :

IXYS

Max Operating Temperature :

150 °C

Product Type :

MOSFET

Base Product Number :

IXFP4N100

Power Dissipation-Max :

150W Tc

Number of Terminations :

3

Terminal Position :

Single

Brand :

IXYS

Number of Channels :

1 Channel

Number of Terminals :

3

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Published :

2008

Packaging :

Tube

Power Dissipation (Max) :

150W (Tc)

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Type :

1 N-Channel

Mounting Type :

Through Hole

Maximum Operating Temperature :

+ 150 C

Avalanche Energy Rating (Eas) :

200 mJ

Surface Mount :

No

Product Status :

Active

Series :

HiPerFET™, PolarP2™

Continuous Drain Current (ID) :

4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Package Shape :

RECTANGULAR

Rds On Max :

3.3 Ω

Package :

Tube

Transistor Polarity :

N-Channel

Power Dissipation :

150W

Input Capacitance (Ciss) (Max) @ Vds :

1456pF @ 25V

FET Type :

N-Channel

Channel Mode :

Enhancement

Polarity/Channel Type :

N-Channel

FET Feature :

--

Additional Feature :

AVALANCHE RATED

Min Operating Temperature :

-55 °C

Rise Time :

36 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Vgs (Max) :

±20V