IXFP4N100P

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Mfr.Part #
IXFP4N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 4A TO220AB
Stock
40,040
In Stock :
40,040

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Operating Mode :
ENHANCEMENT MODE
Mounting Type :
Through Hole
Product Status :
Active
Min Operating Temperature :
-55 °C
Avalanche Energy Rating (Eas) :
200 mJ
Factory Lead Time :
26 Weeks
Power Dissipation-Max (Abs) :
150 W
Configuration :
SINGLE WITH BUILT-IN DIODE
Manufacturer :
IXYS
Max Power Dissipation :
150 W
Channel Mode :
Enhancement
Reach Compliance Code :
Compliant
Mount :
Through Hole
Supplier Device Package :
TO-220AB
Continuous Drain Current (ID) :
4A
Drain Current-Max (Abs) (ID) :
4A
Power Dissipation-Max :
150W Tc
Number of Channels :
1 Channel
Brand :
IXYS
Base Product Number :
IXFP4N100
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Product Type :
MOSFET
Power Dissipation (Max) :
150W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
JEDEC-95 Code :
TO-220AB
Rise Time :
36 ns
Input Capacitance (Ciss) (Max) @ Vds :
1456pF @ 25V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e1
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Package / Case :
TO-220-3
DS Breakdown Voltage-Min :
1000 V
Max Operating Temperature :
150 °C
Drain-source On Resistance-Max :
3.3 Ω
Number of Elements :
1
Tradename :
HiPerFET
Transistor Type :
1 N-Channel
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
20V
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Power Dissipation :
150W
Rds On Max :
3.3 Ω
Published :
2008
JESD-30 Code :
R-PSFM-T3
Input Capacitance :
1.456 nF
Number of Terminals :
3
Drain to Source Voltage (Vdss) :
1000V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pulsed Drain Current-Max (IDM) :
8A
Package :
Tube
FET Type :
N-Channel
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
3.3 Ω @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Pin Count :
3
RoHS :
Details
Pbfree Code :
yes
Minimum Operating Temperature :
- 55 C
Polarity/Channel Type :
N-Channel
Surface Mount :
No
Vgs(th) (Max) @ Id :
5V @ 250μA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Product Category :
MOSFET
Maximum Operating Temperature :
+ 150 C
Terminal Form :
THROUGH-HOLE
Transistor Polarity :
N-Channel
Series :
HiPerFET™, PolarP2™
Operating Temperature :
-55°C~150°C TJ
Additional Feature :
AVALANCHE RATED
Number of Pins :
3
Mounting Style :
Through Hole
Transistor Element Material :
SILICON
Current - Continuous Drain (Id) @ 25°C :
4A Tc
FET Feature :
--
Datasheets
IXFP4N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP4N100P from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1 Channel, Package / Case:TO-220-3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFP4N100P pinout, IXFP4N100P datasheet PDF, IXFP4N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP4N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP4N100P


N-Channel Tube 3.3 Ω @ 2A, 10V ±20V 1456pF @ 25V 26nC @ 10V 1000V TO-220-3

IXFP4N100P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1456pF @ 25V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 4A.A maximum pulsed drain current of 8A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFP4N100P Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 8A.
a 1000V drain to source voltage (Vdss)


IXFP4N100P Applications


There are a lot of IXYS
IXFP4N100P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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