IXFP4N100P
- Mfr.Part #
- IXFP4N100P
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 4A TO220AB
- Stock
- 40,040
- In Stock :
- 40,040
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Through Hole
- Product Status :
- Active
- Min Operating Temperature :
- -55 °C
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Factory Lead Time :
- 26 Weeks
- Power Dissipation-Max (Abs) :
- 150 W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Manufacturer :
- IXYS
- Max Power Dissipation :
- 150 W
- Channel Mode :
- Enhancement
- Reach Compliance Code :
- Compliant
- Mount :
- Through Hole
- Supplier Device Package :
- TO-220AB
- Continuous Drain Current (ID) :
- 4A
- Drain Current-Max (Abs) (ID) :
- 4A
- Power Dissipation-Max :
- 150W Tc
- Number of Channels :
- 1 Channel
- Brand :
- IXYS
- Base Product Number :
- IXFP4N100
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Type :
- MOSFET
- Power Dissipation (Max) :
- 150W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JEDEC-95 Code :
- TO-220AB
- Rise Time :
- 36 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1456pF @ 25V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Qualification Status :
- Not Qualified
- Package / Case :
- TO-220-3
- DS Breakdown Voltage-Min :
- 1000 V
- Max Operating Temperature :
- 150 °C
- Drain-source On Resistance-Max :
- 3.3 Ω
- Number of Elements :
- 1
- Tradename :
- HiPerFET
- Transistor Type :
- 1 N-Channel
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Package Shape :
- RECTANGULAR
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Power Dissipation :
- 150W
- Rds On Max :
- 3.3 Ω
- Published :
- 2008
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance :
- 1.456 nF
- Number of Terminals :
- 3
- Drain to Source Voltage (Vdss) :
- 1000V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 8A
- Package :
- Tube
- FET Type :
- N-Channel
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 3.3 Ω @ 2A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Pin Count :
- 3
- RoHS :
- Details
- Pbfree Code :
- yes
- Minimum Operating Temperature :
- - 55 C
- Polarity/Channel Type :
- N-Channel
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product Category :
- MOSFET
- Maximum Operating Temperature :
- + 150 C
- Terminal Form :
- THROUGH-HOLE
- Transistor Polarity :
- N-Channel
- Series :
- HiPerFET™, PolarP2™
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- Number of Pins :
- 3
- Mounting Style :
- Through Hole
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 4A Tc
- FET Feature :
- --
- Datasheets
- IXFP4N100P

N-Channel Tube 3.3 Ω @ 2A, 10V ±20V 1456pF @ 25V 26nC @ 10V 1000V TO-220-3
IXFP4N100P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1456pF @ 25V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 4A.A maximum pulsed drain current of 8A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXFP4N100P Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 8A.
a 1000V drain to source voltage (Vdss)
IXFP4N100P Applications
There are a lot of IXYS
IXFP4N100P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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