IXFP4N100P

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Mfr.Part #
IXFP4N100P
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 1000V 4A TO220AB
Stock
40,040
In Stock :
40,040

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Product Type :
MOSFET
Number of Elements :
1
Product Category :
MOSFET
Transistor Application :
SWITCHING
Vgs(th) (Max) @ Id :
5V @ 250μA
Drain Current-Max (Abs) (ID) :
4A
Power Dissipation-Max :
150W Tc
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
3.3 Ω
Pulsed Drain Current-Max (IDM) :
8A
Input Capacitance :
1.456 nF
Package :
Tube
Mounting Style :
Through Hole
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
26 Weeks
Current - Continuous Drain (Id) @ 25°C :
4A Tc
FET Type :
N-Channel
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
DS Breakdown Voltage-Min :
1000 V
Continuous Drain Current (ID) :
4A
Vgs (Max) :
±20V
Manufacturer :
IXYS
Transistor Element Material :
SILICON
Series :
HiPerFET™, PolarP2™
JESD-30 Code :
R-PSFM-T3
Min Operating Temperature :
-55 °C
Avalanche Energy Rating (Eas) :
200 mJ
Power Dissipation-Max (Abs) :
150 W
Surface Mount :
No
RoHS :
Details
Published :
2008
Max Operating Temperature :
150 °C
Supplier Device Package :
TO-220AB
Polarity/Channel Type :
N-Channel
Reach Compliance Code :
Compliant
Terminal Form :
THROUGH-HOLE
Rise Time :
36 ns
Qualification Status :
Not Qualified
Max Power Dissipation :
150 W
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Transistor Type :
1 N-Channel
Number of Terminals :
3
Power Dissipation (Max) :
150W (Tc)
JESD-609 Code :
e1
Input Capacitance (Ciss) (Max) @ Vds :
1456pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Additional Feature :
AVALANCHE RATED
Power Dissipation :
150W
JEDEC-95 Code :
TO-220AB
Pin Count :
3
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Channel Mode :
Enhancement
Base Product Number :
IXFP4N100
Tradename :
HiPerFET
Rds On Max :
3.3 Ω
Package Shape :
RECTANGULAR
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
DRAIN
Package / Case :
TO-220-3
Drain to Source Voltage (Vdss) :
1000V
Rds On (Max) @ Id, Vgs :
3.3 Ω @ 2A, 10V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Operating Temperature :
-55°C~150°C TJ
FET Feature :
--
RoHS Status :
ROHS3 Compliant
Product Status :
Active
Brand :
IXYS
Mount :
Through Hole
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
3
Number of Channels :
1 Channel
Terminal Position :
Single
Datasheets
IXFP4N100P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP4N100P from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Channels:1 Channel, IXFP4N100P pinout, IXFP4N100P datasheet PDF, IXFP4N100P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP4N100P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP4N100P


N-Channel Tube 3.3 Ω @ 2A, 10V ±20V 1456pF @ 25V 26nC @ 10V 1000V TO-220-3

IXFP4N100P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 200 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1456pF @ 25V.This device has a continuous drain current (ID) of [4A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 4A.A maximum pulsed drain current of 8A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 1000 V.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFP4N100P Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 4A
based on its rated peak drain current 8A.
a 1000V drain to source voltage (Vdss)


IXFP4N100P Applications


There are a lot of IXYS
IXFP4N100P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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