IXFP3N80

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Configuration :

Single

Continuous Drain Current (ID) :

3.6A

Power Dissipation (Max) :

100W (Tc)

Transistor Application :

SWITCHING

Drain to Source Resistance :

3.6 Ω

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

400 mJ

Mounting Style :

Through Hole

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package Shape :

RECTANGULAR

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Mounting Type :

Through Hole

Rise Time :

11ns

Transistor Polarity :

N-Channel

Published :

2000

JEDEC-95 Code :

TO-220

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

100W

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

3.6A Tc

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

Number of Terminals :

3

Length :

10.66 mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Fall Time (Typ) :

14 ns

Package :

Tube

Channel Mode :

Enhancement

Input Capacitance :

685 pF

Input Capacitance (Ciss) (Max) @ Vds :

685pF @ 25V

RoHS :

Compliant

Manufacturer :

IXYS

Rds On Max :

3.6 Ω

Drain to Source Breakdown Voltage :

800V

Pulsed Drain Current-Max (IDM) :

14.4A

Terminal Finish :

Matte Tin (Sn)

Pin Count :

3

Width :

4.83 mm

Max Operating Temperature :

150 °C

Case Connection :

DRAIN

Terminal Form :

THROUGH-HOLE

Tradename :

HyperFET

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Max Power Dissipation :

100 W

Number of Channels :

1 Channel

Vgs(th) (Max) @ Id :

4.5V @ 1mA

Subcategory :

MOSFETs

Terminal Position :

Single

Packaging :

Tube

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Transistor Type :

1 N-Channel

Height :

9.15 mm

Reach Compliance Code :

Compliant

Brand :

IXYS

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

DS Breakdown Voltage-Min :

800 V

Number of Elements :

1

Product Status :

Active

Element Configuration :

Single

FET Type :

N-Channel

Minimum Operating Temperature :

- 55 C

Base Product Number :

IXFP3

Rds On (Max) @ Id, Vgs :

3.6 Ω @ 500mA, 10V

Supplier Device Package :

TO-220AB

Polarity/Channel Type :

N-Channel

FET Feature :

--

Mount :

Through Hole

Min Operating Temperature :

-55 °C

Power Dissipation-Max :

100W Tc

Drain to Source Voltage (Vdss) :

800 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e3

Turn-Off Delay Time :

25 ns

Drain-source On Resistance-Max :

3.6 Ω

RoHS Status :

ROHS3 Compliant

Series :

HiPerFET™

Product Category :

MOSFET