IXFP3N50PM

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

30V

Additional Feature :

AVALANCHE RATED

Turn-Off Delay Time :

63 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Polarity/Channel Type :

N-Channel

Fall Time (Typ) :

29 ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

2.7A

Gate Charge (Qg) (Max) @ Vgs :

9.3nC @ 10V

Power Dissipation :

36W

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

100 mJ

FET Type :

N-Channel

Drain-source On Resistance-Max :

2Ohm

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

409pF @ 25V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

500V

Drain to Source Breakdown Voltage :

500V

Number of Elements :

1

Mounting Type :

Through Hole

Mount :

Through Hole

Base Product Number :

IXFP3

Package :

Tube

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

No

Packaging :

Tube

Terminal Position :

Single

Pin Count :

3

Terminal Finish :

Matte Tin (Sn)

Rise Time :

28ns

Package Shape :

RECTANGULAR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation (Max) :

36W (Tc)

Product Status :

Obsolete

Power Dissipation-Max :

36W Tc

Number of Terminations :

3

Case Connection :

Isolated

Published :

2006

Pulsed Drain Current-Max (IDM) :

8A

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Series :

HiPerFET™, PolarHT™

Qualification Status :

Not Qualified

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Package / Case :

TO-220-3

Manufacturer :

IXYS Corporation

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-220AB

FET Feature :

--

DS Breakdown Voltage-Min :

500 V

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.8A, 10V