IXFP22N60P3

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Mfr.Part #
IXFP22N60P3
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 22A TO220AB
Stock
1
In Stock :
1

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Tradename :
HiPerFET
Package Type :
TO-220AB
Turn On Delay Time :
28 ns
Fall Time (Typ) :
19 ns
Reach Compliance Code :
Unknown
Transistor Element Material :
SILICON
Power Dissipation-Max (Abs) :
500 W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage :
600V
Case Connection :
DRAIN
Terminal Position :
Single
Vgs (Max) :
±30V
FET Type :
N-Channel
Width :
4.83mm
Drain Current-Max (Abs) (ID) :
22 A
Element Configuration :
Single
Length :
10.66mm
Pulsed Drain Current-Max (IDM) :
55A
RoHS :
Details
Mounting Type :
Through Hole
Continuous Drain Current (ID) :
22A
Vgs(th) (Max) @ Id :
5V @ 1.5mA
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Number of Pins :
3
Current - Continuous Drain (Id) @ 25°C :
22A Tc
Supplier Device Package :
TO-220AB
Transistor Polarity :
N-Channel
Pin Count :
3
Product Category :
MOSFET
Series :
HiPerFET™, Polar3™
Avalanche Energy Rating (Eas) :
400 mJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package :
Tube
Transistor Type :
1 N-Channel
Power Dissipation (Max) :
500W (Tc)
Additional Feature :
AVALANCHE RATED
Packaging :
Tube
Power Dissipation-Max :
500W Tc
Surface Mount :
No
Drain-source On Resistance-Max :
0.36 Ω
FET Feature :
--
Mounting Style :
Through Hole
JESD-30 Code :
R-PSFM-T3
Product Type :
MOSFET
Published :
2011
Maximum Operating Temperature :
+150 °C
Factory Lead Time :
26 Weeks
DS Breakdown Voltage-Min :
600 V
Package Shape :
RECTANGULAR
Base Product Number :
IXFP22
Gate to Source Voltage (Vgs) :
30V
Minimum Operating Temperature :
-55 °C
Number of Channels :
1 Channel
Rds On (Max) @ Id, Vgs :
360m Ω @ 11A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Mode :
Enhancement
Number of Terminations :
3
Package / Case :
TO-220-3
Drain to Source Voltage (Vdss) :
600V
Manufacturer :
IXYS
Number of Terminals :
3
Brand :
IXYS
Configuration :
Single
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Rise Time :
17ns
Turn-Off Delay Time :
54 ns
Channel Type :
N
Mount :
Through Hole
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 25V
Polarity/Channel Type :
N-Channel
Number of Elements per Chip :
1
Qualification Status :
Not Qualified
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Power Dissipation :
500W
Product Status :
Active
Height :
16mm
Terminal Form :
THROUGH-HOLE
JEDEC-95 Code :
TO-220AB
Datasheets
IXFP22N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP22N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1 Channel, Number of Terminations:3, Package / Case:TO-220-3, IXFP22N60P3 pinout, IXFP22N60P3 datasheet PDF, IXFP22N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP22N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP22N60P3


N-Channel Tube 360m Ω @ 11A, 10V ±30V 2600pF @ 25V 38nC @ 10V 600V TO-220-3

IXFP22N60P3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.The maximum input capacitance of this device is 2600pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 22A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.As shown in the table below, the drain current of this device is 22 A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 54 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 55A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 28 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600 V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IXFP22N60P3 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 54 ns
based on its rated peak drain current 55A.
a 600V drain to source voltage (Vdss)


IXFP22N60P3 Applications


There are a lot of IXYS
IXFP22N60P3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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