IXFP180N10T2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Position :

Single

Continuous Drain Current (ID) :

180A

RoHS :

Details

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Power Dissipation (Max) :

480W (Tc)

Max Power Dissipation :

480 W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

MOSFET

Channels :

1

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

3

Base Product Number :

IXFP180

Transistor Polarity :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Channel Mode :

Enhancement

JEDEC-95 Code :

TO-220AB

Product Status :

Active

Reach Compliance Code :

Unknown

Number of Elements :

1

Drain-source On Resistance-Max :

0.006Ohm

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Pin Count :

3

Factory Lead Time :

26 Weeks

Product Type :

MOSFET

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance :

10.5 nF

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Channels :

1 Channel

Maximum Operating Temperature :

+ 175 C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Brand :

IXYS

ECCN Code :

EAR99

Rds On Max :

6 mΩ

Published :

2010

Enclosure :

TO 220AB

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Packaging :

Tube

Manufacturer :

IXYS

Type :

N-Channel

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Package / Case :

TO-220-3

Manuf. code :

IXY

Pulsed Drain Current-Max (IDM) :

450A

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

JESD-30 Code :

R-PSFM-T3

DS Breakdown Voltage-Min :

100V

Tradename :

HiPerFET

Series :

GigaMOS™, HiPerFET™, TrenchT2™

Qualification Status :

Not Qualified

Content :

1pc(s)

Supplier Device Package :

TO-220AB

Power (max) P(TOT) :

480W

Power Dissipation-Max :

480W Tc

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

6m Ω @ 50A, 10V

Max. operating temperature :

+175°C

Mounting Type :

Through Hole

FET Feature :

--

Avalanche Energy Rating (Eas) :

750 mJ

Mount :

Through Hole

Package :

Tube