IXFP16N50P3
- Mfr.Part #
- IXFP16N50P3
- Manufacturer
- Littelfuse
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 16A TO220AB
- Stock
- 90
- In Stock :
- 90
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Supplier Device Package :
- TO-220AB
- Package :
- Tube
- Max Operating Temperature :
- 150 °C
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Mounting Style :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 40A
- Number of Channels :
- 1 Channel
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation-Max :
- 330W Tc
- Power Dissipation-Max (Abs) :
- 330 W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Channel Type :
- N Channel
- Element Configuration :
- Single
- Configuration :
- Single
- Vgs (Max) :
- ±30V
- Max Power Dissipation :
- 330 W
- Height :
- 16mm
- Drain to Source Resistance :
- 360 mΩ
- Terminal Form :
- THROUGH-HOLE
- Series :
- HiPerFET™, Polar3™
- Transistor Element Material :
- SILICON
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS
- Maximum Operating Temperature :
- + 150 C
- RoHS :
- Details
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.36 Ω
- Factory Lead Time :
- 26 Weeks
- Transistor Type :
- 1 N-Channel
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation (Max) :
- 330W (Tc)
- Operating Temperature :
- -55°C~150°C TJ
- Brand :
- IXYS
- Product Status :
- Active
- Turn On Delay Time :
- 19 ns
- Qualification :
- -
- Product Category :
- MOSFET
- ECCN Code :
- EAR99
- Terminal Position :
- Single
- MSL :
- MSL 1 - Unlimited
- Minimum Operating Temperature :
- - 55 C
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 8A, 10V
- Drain Current-Max (Abs) (ID) :
- 16 A
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- JESD-30 Code :
- R-PSFM-T3
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Channel Mode :
- Enhancement
- Tradename :
- HiPerFET
- Product Type :
- MOSFET
- Case Connection :
- DRAIN
- Width :
- 4.83mm
- Published :
- 2011
- Power Dissipation :
- 330W
- Min Operating Temperature :
- -55 °C
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Continuous Drain Current Id :
- 16A
- Turn-Off Delay Time :
- 44 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1515pF @ 25V
- Turn-On Delay Time :
- 19 ns
- Length :
- 10.66mm
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Reach Compliance Code :
- Compliant
- Surface Mount :
- No
- Continuous Drain Current (ID) :
- 16A
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminals :
- 3
- FET Feature :
- --
- Input Capacitance :
- 1.515 nF
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 500V
- DS Breakdown Voltage-Min :
- 500V
- Rds On Max :
- 360 mΩ
- Base Product Number :
- IXFP16
- Datasheets
- IXFP16N50P3

N-Channel Tube 360m Ω @ 8A, 10V ±30V 1515pF @ 25V 29nC @ 10V 500V TO-220-3
IXFP16N50P3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1515pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 16A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 16 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 44 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 360 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFP16N50P3 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
single MOSFETs transistor is 360 mΩ
a 500V drain to source voltage (Vdss)
IXFP16N50P3 Applications
There are a lot of IXYS
IXFP16N50P3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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