IXFP16N50P3

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Mfr.Part #
IXFP16N50P3
Manufacturer
Littelfuse
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 500V 16A TO220AB
Stock
90
In Stock :
90

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Package / Case :
TO-220-3
FET Type :
N-Channel
Additional Feature :
AVALANCHE RATED
Supplier Device Package :
TO-220AB
Package :
Tube
Max Operating Temperature :
150 °C
Mounting Type :
Through Hole
Avalanche Energy Rating (Eas) :
300 mJ
Mounting Style :
Through Hole
Pulsed Drain Current-Max (IDM) :
40A
Number of Channels :
1 Channel
JEDEC-95 Code :
TO-220AB
Power Dissipation-Max :
330W Tc
Power Dissipation-Max (Abs) :
330 W
Drive Voltage (Max Rds On,Min Rds On) :
10V
Channel Type :
N Channel
Element Configuration :
Single
Configuration :
Single
Vgs (Max) :
±30V
Max Power Dissipation :
330 W
Height :
16mm
Drain to Source Resistance :
360 mΩ
Terminal Form :
THROUGH-HOLE
Series :
HiPerFET™, Polar3™
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Maximum Operating Temperature :
+ 150 C
RoHS :
Details
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.36 Ω
Factory Lead Time :
26 Weeks
Transistor Type :
1 N-Channel
RoHS Status :
ROHS3 Compliant
Power Dissipation (Max) :
330W (Tc)
Operating Temperature :
-55°C~150°C TJ
Brand :
IXYS
Product Status :
Active
Turn On Delay Time :
19 ns
Qualification :
-
Product Category :
MOSFET
ECCN Code :
EAR99
Terminal Position :
Single
MSL :
MSL 1 - Unlimited
Minimum Operating Temperature :
- 55 C
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
360m Ω @ 8A, 10V
Drain Current-Max (Abs) (ID) :
16 A
Number of Pins :
3
Vgs(th) (Max) @ Id :
5V @ 2.5mA
JESD-30 Code :
R-PSFM-T3
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Channel Mode :
Enhancement
Tradename :
HiPerFET
Product Type :
MOSFET
Case Connection :
DRAIN
Width :
4.83mm
Published :
2011
Power Dissipation :
330W
Min Operating Temperature :
-55 °C
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Continuous Drain Current Id :
16A
Turn-Off Delay Time :
44 ns
Input Capacitance (Ciss) (Max) @ Vds :
1515pF @ 25V
Turn-On Delay Time :
19 ns
Length :
10.66mm
Transistor Polarity :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
16A Tc
Reach Compliance Code :
Compliant
Surface Mount :
No
Continuous Drain Current (ID) :
16A
Operating Mode :
ENHANCEMENT MODE
Number of Terminals :
3
FET Feature :
--
Input Capacitance :
1.515 nF
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Gate to Source Voltage (Vgs) :
30V
Packaging :
Tube
Mount :
Through Hole
Drain to Source Voltage (Vdss) :
500V
DS Breakdown Voltage-Min :
500V
Rds On Max :
360 mΩ
Base Product Number :
IXFP16
Datasheets
IXFP16N50P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFP16N50P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Channels:1 Channel, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, IXFP16N50P3 pinout, IXFP16N50P3 datasheet PDF, IXFP16N50P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFP16N50P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFP16N50P3


N-Channel Tube 360m Ω @ 8A, 10V ±30V 1515pF @ 25V 29nC @ 10V 500V TO-220-3

IXFP16N50P3 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 300 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1515pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 16A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 16 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 44 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 40A. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 360 mΩ. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFP16N50P3 Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 16A
the turn-off delay time is 44 ns
based on its rated peak drain current 40A.
single MOSFETs transistor is 360 mΩ
a 500V drain to source voltage (Vdss)


IXFP16N50P3 Applications


There are a lot of IXYS
IXFP16N50P3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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