IXFN90N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

FET Feature :

--

Product Status :

Obsolete

Height :

12.22 mm

Product :

Power MOSFET Modules

Product Type :

Discrete Semiconductor Modules

Rise Time :

55ns

Avalanche Energy Rating (Eas) :

3000 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Brand :

IXYS

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED

Transistor Polarity :

N-Channel

Number of Terminals :

4

Series :

HiPerFET™

Pulsed Drain Current-Max (IDM) :

360A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Continuous Drain Current (ID) :

90A

Terminal Form :

UNSPECIFIED

Drain to Source Voltage (Vdss) :

300V

Drain to Source Breakdown Voltage :

300V

Supplier Device Package :

SOT-227B

Rds On (Max) @ Id, Vgs :

33m Ω @ 45A, 10V

Width :

25.42 mm

Number of Terminations :

4

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Product Number :

IXFN90

Lead Free :

Lead Free

Pbfree Code :

yes

Type :

HiPerFET Power MOSFET

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Power Dissipation :

560W

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 8mA

Package / Case :

SOT-227-4, miniBLOC

Drain-source On Resistance-Max :

0.033 Ω

Factory Lead Time :

8 Weeks

Mount :

Chassis Mount

Terminal Finish :

Nickel (Ni)

Packaging :

Tube

Resistance :

33mOhm

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Turn-Off Delay Time :

100 ns

Mounting Style :

Chassis Mount

Pin Count :

4

Subcategory :

Discrete Semiconductor Modules

Product Category :

Discrete Semiconductor Modules

Reach Compliance Code :

Compliant

Length :

38.23 mm

Terminal Position :

UPPER

Manufacturer :

IXYS

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Number of Elements :

1

Number of Pins :

4

Transistor Application :

SWITCHING

Number of Channels :

1 Channel

Power Dissipation-Max :

560W Tc

DS Breakdown Voltage-Min :

300 V

RoHS Status :

RoHS Compliant

Power Dissipation (Max) :

560W (Tc)

Published :

2002

RoHS :

Details

Input Capacitance (Ciss) (Max) @ Vds :

10000pF @ 25V

Maximum Operating Temperature :

+ 150 C

JESD-30 Code :

R-PUFM-X4

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Tradename :

HyperFET

Fall Time (Typ) :

40 ns

Package Shape :

RECTANGULAR

Mounting Type :

Chassis Mount

Minimum Operating Temperature :

- 55 C

Package :

Tube