IXFN120N65X2
- Mfr.Part #
- IXFN120N65X2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 108A SOT227B
- Stock
- 93
- In Stock :
- 93
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Chassis Mount
- Package / Case :
- SOT-227-4, miniBLOC
- FET Feature :
- --
- Package :
- Tube
- Type :
- HiPerFET
- Product Type :
- Discrete Semiconductor Modules
- Drain to Source Voltage (Vdss) :
- 650V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 108A Tc
- Number of Channels :
- 1 Channel
- Base Product Number :
- IXFN120
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 54A, 10V
- Maximum Operating Temperature :
- + 150 C
- Published :
- 2015
- Reach Compliance Code :
- Unknown
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Manufacturer :
- IXYS
- Factory Lead Time :
- 19 Weeks
- Product :
- Power MOSFET Modules
- Mounting Style :
- Screw Mounts
- Rise Time :
- 23 ns
- Tradename :
- HiPerFET
- Vgs(th) (Max) @ Id :
- 5.5V @ 8mA
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation (Max) :
- 890W (Tc)
- Power Dissipation-Max :
- 890W Tc
- Mounting Type :
- Chassis Mount
- Continuous Drain Current (ID) :
- 108A
- Product Status :
- Active
- Transistor Polarity :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Minimum Operating Temperature :
- - 55 C
- RoHS :
- Details
- FET Type :
- N-Channel
- Subcategory :
- Discrete Semiconductor Modules
- Brand :
- IXYS
- Gate Charge (Qg) (Max) @ Vgs :
- 225nC @ 10V
- Vgs (Max) :
- ±30V
- Supplier Device Package :
- SOT-227B
- Input Capacitance (Ciss) (Max) @ Vds :
- 15500pF @ 25V
- Product Category :
- Discrete Semiconductor Modules
- Series :
- HiPerFET™
- Datasheets
- IXFN120N65X2
IXFN120N65X2 Documents

N-Channel Tube 24m Ω @ 54A, 10V ±30V 15500pF @ 25V 225nC @ 10V 650V SOT-227-4, miniBLOC
IXFN120N65X2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 15500pF @ 25V.This device conducts a continuous drain current (ID) of 108A, which is the maximum continuous current transistor can conduct.This transistor requires a drain-source voltage (Vdss) of 650V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFN120N65X2 Features
a continuous drain current (ID) of 108A
a 650V drain to source voltage (Vdss)
IXFN120N65X2 Applications
There are a lot of IXYS
IXFN120N65X2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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