IXFN100N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Product Category :

Discrete Semiconductor Modules

Mounting Style :

Chassis Mount

Number of Pins :

4

Width :

25.42 mm

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Terminal Position :

UPPER

Transistor Polarity :

N-Channel

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

400 A

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Power Dissipation-Max :

520W Tc

Number of Channels :

1 Channel

Rise Time :

80ns

Manufacturer :

IXYS

Turn-Off Delay Time :

75 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

4

Product Status :

Active

Length :

38.23 mm

Rds On (Max) @ Id, Vgs :

23m Ω @ 500mA, 10V

Product Type :

Discrete Semiconductor Modules

Power Dissipation (Max) :

520W (Tc)

Reach Compliance Code :

Compliant

Terminal Form :

UNSPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

SOT-227-4, miniBLOC

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Supplier Device Package :

SOT-227B

RoHS :

Details

Drain-source On Resistance-Max :

0.023 Ω

Vgs(th) (Max) @ Id :

4V @ 8mA

Case Connection :

Isolated

Height :

9.6 mm

Pbfree Code :

yes

Surface Mount :

No

Drain to Source Voltage (Vdss) :

200V

Drain to Source Breakdown Voltage :

200V

Number of Elements :

1

Package :

Tube

Vgs (Max) :

±20V

Terminal Finish :

Nickel (Ni)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Subcategory :

Discrete Semiconductor Modules

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminals :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PUFM-X4

Operating Temperature :

-55°C~150°C TJ

Series :

HiPerFET™

Continuous Drain Current (ID) :

100A

Mount :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

FET Feature :

--

Packaging :

Tube

Power Dissipation :

520W

Base Product Number :

IXFN100

Polarity/Channel Type :

N-Channel

FET Type :

N-Channel

Tradename :

HyperFET

Published :

2000

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

200 V

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Brand :

IXYS

Fall Time (Typ) :

30 ns

Minimum Operating Temperature :

- 55 C

Qualification Status :

Not Qualified

Mounting Type :

Chassis Mount

Resistance :

23mOhm