IXFN110N60P3
- Mfr.Part #
- IXFN110N60P3
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 90A SOT227B
- Stock
- 306
- In Stock :
- 306
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Manufacturer :
- IXYS
- Mounting Type :
- Chassis Mount
- Product Category :
- Discrete Semiconductor Modules
- Number of Channels :
- 1 Channel
- Pulsed Drain Current-Max (IDM) :
- 275A
- Package / Case :
- SOT-227-4, miniBLOC
- Channel Type :
- N
- Supplier Device Package :
- SOT-227B
- Drain to Source Breakdown Voltage :
- 600V
- Rise Time :
- 19ns
- Drain-source On Resistance-Max :
- 0.056Ohm
- Other Names :
- 625715
- Terminal Position :
- UPPER
- Number of Terminations :
- 4
- Base Product Number :
- IXFN110
- Power Dissipation :
- 1.5kW
- Maximum Operating Temperature :
- +150 °C
- Terminal Form :
- UNSPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 245nC @ 10V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 4
- Turn On Delay Time :
- 63 ns
- Pin Count :
- 4
- Package Type :
- SOT-227
- Factory Lead Time :
- 30 Weeks
- Additional Feature :
- AVALANCHE RATED, UL RECOGNIZED
- Fall Time (Typ) :
- 11 ns
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Brand :
- IXYS
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Minimum Operating Temperature :
- -55 °C
- Rds On (Max) @ Id, Vgs :
- 56m Ω @ 55A, 10V
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Number of Elements :
- 1
- Height :
- 9.6mm
- Turn-Off Delay Time :
- 77 ns
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 90A
- Input Capacitance (Ciss) (Max) @ Vds :
- 18000pF @ 25V
- Width :
- 25.07mm
- Transistor Polarity :
- N-Channel
- Vgs (Max) :
- ±30V
- Case Connection :
- Isolated
- Drain to Source Voltage (Vdss) :
- 600V
- Type :
- HiPerFET
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1500W Tc
- Number of Elements per Chip :
- 1
- Package :
- Tube
- Configuration :
- Single
- Product Type :
- Discrete Semiconductor Modules
- Reach Compliance Code :
- Unknown
- Power Dissipation (Max) :
- 1500W (Tc)
- Lead Free :
- Lead Free
- Product :
- Power MOSFET Modules
- Mount :
- Chassis Mount, Panel, Screw
- Transistor Application :
- SWITCHING
- Product Status :
- Active
- Gate to Source Voltage (Vgs) :
- 30V
- Channel Mode :
- Enhancement
- FET Feature :
- -
- Qualification Status :
- Not Qualified
- Series :
- HiPerFET™, Polar3™
- Mounting Style :
- Screw Mounts
- Tradename :
- HiPerFET
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS :
- Details
- Length :
- 38.23mm
- Datasheets
- IXFN110N60P3

N-Channel Tube 56m Ω @ 55A, 10V ±30V 18000pF @ 25V 245nC @ 10V 600V SOT-227-4, miniBLOC
IXFN110N60P3 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 18000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 90A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=600V. And this device has 600V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 77 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 275A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 63 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFN110N60P3 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 275A.
a 600V drain to source voltage (Vdss)
IXFN110N60P3 Applications
There are a lot of IXYS
IXFN110N60P3 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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