IXFN130N30

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Mfr.Part #
IXFN130N30
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 300V 130A SOT-227B
Stock
10,587
In Stock :
10,587

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Termination :
Screw
Current Rating :
130A
Voltage - Rated DC :
300V
Drain to Source Voltage (Vdss) :
300V
Vgs (Max) :
±20V
Terminal Finish :
Nickel (Ni)
Operating Mode :
ENHANCEMENT MODE
Supplier Device Package :
SOT-227B
Published :
2003
Base Product Number :
IXFN130
Mount :
Chassis Mount, Screw
Rise Time :
75ns
Series :
HiPerFET™
Pin Count :
4
Threshold Voltage :
4V
Reverse Recovery Time :
250 ns
Power Dissipation-Max :
700W Tc
Number of Terminals :
4
Drain to Source Breakdown Voltage :
300V
Package :
Tube
Terminal Form :
UNSPECIFIED
Continuous Drain Current (ID) :
130A
Product Status :
Not For New Designs
Terminal Position :
UPPER
Drain-source On Resistance-Max :
0.022 Ω
Qualification Status :
Not Qualified
Number of Terminations :
4
Package / Case :
SOT-227-4, miniBLOC
Reach Compliance Code :
Compliant
RoHS Status :
RoHS Compliant
Drain Current-Max (Abs) (ID) :
130 A
Turn-Off Delay Time :
130 ns
Factory Lead Time :
8 Weeks
Nominal Vgs :
4 V
Surface Mount :
No
Power Dissipation (Max) :
700W (Tc)
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
Pulsed Drain Current-Max (IDM) :
520A
Power Dissipation :
700W
Number of Elements :
1
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
22m Ω @ 500mA, 10V
Gate to Source Voltage (Vgs) :
20V
DS Breakdown Voltage-Min :
300 V
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
14500pF @ 25V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PUFM-X4
Dual Supply Voltage :
300V
Transistor Application :
SWITCHING
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Pins :
4
Avalanche Energy Rating (Eas) :
4000 mJ
Vgs(th) (Max) @ Id :
4V @ 8mA
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Mounting Type :
Chassis Mount
Case Connection :
Isolated
Manufacturer :
IXYS
Lead Free :
Lead Free
REACH SVHC :
No SVHC
Weight :
36mg
Fall Time (Typ) :
31 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
130A Tc
Resistance :
22mOhm
Transistor Element Material :
SILICON
Package Shape :
RECTANGULAR
FET Feature :
--
Power Dissipation-Max (Abs) :
700 W
Packaging :
Tube
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IXFN130N30
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN130N30 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, Mounting Type:Chassis Mount, IXFN130N30 pinout, IXFN130N30 datasheet PDF, IXFN130N30 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN130N30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN130N30


N-Channel Tube 22m Ω @ 500mA, 10V ±20V 14500pF @ 25V 380nC @ 10V 300V SOT-227-4, miniBLOC

IXFN130N30 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 4000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 14500pF @ 25V.This device conducts a continuous drain current (ID) of 130A, which is the maximum continuous current transistor can conduct.Using VGS=300V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 300V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 130 A.When the device is turned off, a turn-off delay time of 130 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 520A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 300 V.This transistor requires a drain-source voltage (Vdss) of 300V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFN130N30 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 130A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 130 ns
based on its rated peak drain current 520A.
a threshold voltage of 4V
a 300V drain to source voltage (Vdss)


IXFN130N30 Applications


There are a lot of IXYS
IXFN130N30 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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