IXFN110N85X

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Type :

HiPerFET

Product Category :

Discrete Semiconductor Modules

Power Dissipation-Max :

1170W Tc

Package :

Tube

Gate Charge (Qg) (Max) @ Vgs :

425nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Mounting Type :

Chassis Mount

Mounting Style :

Screw Mounts

Vgs (Max) :

±30V

Series :

HiPerFET™

Height :

9.6mm

Input Capacitance (Ciss) (Max) @ Vds :

17000pF @ 25V

Configuration :

Single

Manufacturer :

IXYS

Power Dissipation (Max) :

1170W (Tc)

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

Not Applicable

Maximum Operating Temperature :

+150 °C

Pin Count :

4

FET Type :

N-Channel

Package Type :

SOT-227

Pbfree Code :

yes

Rise Time :

25 ns

Number of Elements per Chip :

1

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Brand :

IXYS

FET Feature :

--

Product :

Power MOSFET Modules

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Published :

2016

Factory Lead Time :

19 Weeks

RoHS :

Details

Package / Case :

SOT-227-4, miniBLOC

Length :

38.23mm

Product Status :

Active

Vgs(th) (Max) @ Id :

5.5V @ 8mA

Drain to Source Voltage (Vdss) :

850V

Minimum Operating Temperature :

-55 °C

Product Type :

Discrete Semiconductor Modules

Width :

25.07mm

Supplier Device Package :

SOT-227B

Rds On (Max) @ Id, Vgs :

33m Ω @ 55A, 10V

Channel Mode :

Enhancement

Packaging :

Tube

Channel Type :

N

Tradename :

HiPerFET

Subcategory :

Discrete Semiconductor Modules

Base Product Number :

IXFN110

Reach Compliance Code :

Unknown