IXFN106N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Chassis Mount

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Resistance :

20mOhm

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

106A

Configuration :

Single

Terminal Finish :

Nickel (Ni)

Pulsed Drain Current-Max (IDM) :

424 A

Package Shape :

RECTANGULAR

Product :

Power MOSFET Modules

Drain to Source Voltage (Vdss) :

200V

Maximum Operating Temperature :

+ 150 C

Number of Pins :

4

Manufacturer :

IXYS

Tradename :

HyperFET

Terminal Form :

UNSPECIFIED

Lead Free :

Lead Free

Terminal Position :

UPPER

Input Capacitance :

9nF

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1 Channel

Minimum Operating Temperature :

- 55 C

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

20mOhm @ 500mA, 10V

Rise Time :

80ns

Number of Terminals :

4

Max Operating Temperature :

150°C

Turn-Off Delay Time :

75 ns

Supplier Device Package :

SOT-227B

RoHS :

Details

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Power Dissipation-Max (Abs) :

520 W

Transistor Element Material :

SILICON

Package / Case :

SOT-227-4, miniBLOC

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

200V

Voltage - Rated DC :

200V

Packaging :

Tube

Transistor Application :

SWITCHING

Subcategory :

Discrete Semiconductor Modules

Product Category :

Discrete Semiconductor Modules

Height :

9.6 mm

Power Dissipation :

520W

Min Operating Temperature :

-55°C

Fall Time (Typ) :

30 ns

Base Product Number :

IXFN106

Current - Continuous Drain (Id) @ 25°C :

106A Tc

Moisture Sensitivity Level (MSL) :

Not Applicable

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

4

Brand :

IXYS

Resistance :

20mOhm

Surface Mount :

No

Case Connection :

Isolated

FET Feature :

--

Rds On Max :

20 mΩ

JESD-30 Code :

R-PUFM-X4

Length :

38.2 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Style :

Chassis Mount

Number of Elements :

1

Width :

25.07 mm

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

Current Rating :

106A

Vgs(th) (Max) @ Id :

4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs :

380nC @ 10V

Additional Feature :

AVALANCHE RATED

Product Type :

Discrete Semiconductor Modules

ECCN Code :

EAR99

Power Dissipation-Max :

521W Tc

Drain-source On Resistance-Max :

0.02 Ω

Drain Current-Max (Abs) (ID) :

106 A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation Ambient-Max :

520 W

Package :

Tube

DS Breakdown Voltage-Min :

200 V

Product Status :

Not For New Designs

Mount :

Chassis Mount, Screw

Reach Compliance Code :

Compliant

Published :

2000

Vgs (Max) :

±20V

Series :

HiPerFET™

Power Dissipation (Max) :

521W (Tc)