IXFN100N50Q3

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

30 Weeks

Packaging :

Tube

Transistor Application :

SWITCHING

Number of Elements per Chip :

1

Reach Compliance Code :

Compliant

Product Category :

Discrete Semiconductor Modules

Element Configuration :

Single

Drain Current-Max (Abs) (ID) :

82 A

Package :

Tube

Additional Feature :

UL RECOGNIZED

Vgs (Max) :

±30V

Turn On Delay Time :

40 ns

Transistor Element Material :

SILICON

Channel Mode :

Enhancement

Base Product Number :

IXFN100

Terminal Position :

UPPER

Number of Pins :

4

Drain to Source Breakdown Voltage :

500V

Product Status :

Active

FET Feature :

--

Number of Terminations :

4

Product :

Power MOSFET Modules

Case Connection :

Isolated

RoHS Status :

ROHS3 Compliant

Configuration :

Single

Rds On (Max) @ Id, Vgs :

49m Ω @ 50A, 10V

Mount :

Chassis Mount, Panel

Maximum Operating Temperature :

+150 °C

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

5000 mJ

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Type :

HiPerFET

Height :

9.6mm

Turn-Off Delay Time :

50 ns

Manufacturer :

IXYS

Supplier Device Package :

SOT-227B

Package Type :

SOT-227

Drain to Source Voltage (Vdss) :

500V

Channel Type :

N

Power Dissipation :

960W

Product Type :

Discrete Semiconductor Modules

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Minimum Operating Temperature :

-55 °C

Input Capacitance (Ciss) (Max) @ Vds :

13800pF @ 25V

Mounting Style :

Screw Mounts

Rise Time :

250ns

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Published :

2011

Power Dissipation-Max :

960W Tc

Number of Channels :

1 Channel

FET Type :

N-Channel

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

300A

Number of Terminals :

4

Package / Case :

SOT-227-4, miniBLOC

Length :

38.23mm

RoHS :

Details

Tradename :

HiPerFET

Power Dissipation (Max) :

960W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

255nC @ 10V

DS Breakdown Voltage-Min :

500 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.049 Ω

Power Dissipation-Max (Abs) :

960 W

Mounting Type :

Chassis Mount

Polarity/Channel Type :

N-Channel

JESD-30 Code :

R-PUFM-X4

Vgs(th) (Max) @ Id :

6.5V @ 8mA

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

Continuous Drain Current (ID) :

82A

Series :

HiPerFET™

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

UNSPECIFIED

Brand :

IXYS

Width :

25.07mm