IXFN120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Number of Pins :

3

DS Breakdown Voltage-Min :

200 V

Recovery Time :

250 ns

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Transistor Application :

SWITCHING

Transistor Polarity :

N-Channel

Base Product Number :

IXFN120

Lead Free :

Lead Free

FET Type :

N-Channel

Maximum Operating Temperature :

+ 150 C

Product Type :

Discrete Semiconductor Modules

Drain to Source Voltage (Vdss) :

200V

Number of Channels :

1 Channel

REACH SVHC :

No SVHC

Length :

38.23 mm

Continuous Drain Current (ID) :

120A

Package :

Tube

Number of Terminals :

4

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Width :

25.42 mm

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

600W

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

4

Terminal Finish :

Nickel (Ni)

Product Status :

Not For New Designs

Dual Supply Voltage :

200V

Threshold Voltage :

4V

Type :

HiPerFET

Tradename :

HyperFET

Factory Lead Time :

8 Weeks

Turn-Off Delay Time :

110 ns

Vgs (Max) :

±20V

Mount :

Chassis Mount

RoHS Status :

RoHS Compliant

Pin Count :

4

Supplier Device Package :

SOT-227B

Mounting Type :

Chassis Mount

Number of Elements :

1

Current Rating :

120A

Power Dissipation-Max :

600W Tc

Moisture Sensitivity Level (MSL) :

Not Applicable

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Pulsed Drain Current-Max (IDM) :

480A

Configuration :

SINGLE WITH BUILT-IN DIODE

Resistance :

17mOhm

Product Category :

Discrete Semiconductor Modules

Manufacturer :

IXYS

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

4V @ 8mA

Rds On (Max) @ Id, Vgs :

17m Ω @ 500mA, 10V

Minimum Operating Temperature :

- 55 C

Case Connection :

Isolated

Fall Time (Typ) :

40 ns

Published :

2003

RoHS :

Details

Height :

9.6 mm

JESD-30 Code :

R-PUFM-X4

Rise Time :

55ns

Mounting Style :

Screw Mounts

Power Dissipation-Max (Abs) :

600 W

Surface Mount :

No

Polarity/Channel Type :

N-Channel

Product :

Power MOSFET Modules

Series :

HiPerFET™

Nominal Vgs :

4 V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Terminal Position :

UPPER

Voltage - Rated DC :

200V

Brand :

IXYS

FET Feature :

--

Package / Case :

SOT-227-4, miniBLOC

Power Dissipation (Max) :

600W (Tc)

Terminal Form :

UNSPECIFIED

Package Shape :

RECTANGULAR

Avalanche Energy Rating (Eas) :

3000 mJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

120 A

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.017 Ω

Drain to Source Breakdown Voltage :

200V