IXFN120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Power Dissipation-Max :

600W Tc

Width :

25.42 mm

Dual Supply Voltage :

200V

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

200 V

Number of Terminals :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS :

Details

Reach Compliance Code :

Compliant

JESD-30 Code :

R-PUFM-X4

Drain to Source Breakdown Voltage :

200V

Mounting Type :

Chassis Mount

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Avalanche Energy Rating (Eas) :

3000 mJ

Product Category :

Discrete Semiconductor Modules

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Mounting Style :

Screw Mounts

Supplier Device Package :

SOT-227B

Published :

2003

Package / Case :

SOT-227-4, miniBLOC

Mount :

Chassis Mount

Surface Mount :

No

Minimum Operating Temperature :

- 55 C

Case Connection :

Isolated

Resistance :

17mOhm

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

17m Ω @ 500mA, 10V

Power Dissipation (Max) :

600W (Tc)

Vgs(th) (Max) @ Id :

4V @ 8mA

Recovery Time :

250 ns

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Transistor Polarity :

N-Channel

Pulsed Drain Current-Max (IDM) :

480A

ECCN Code :

EAR99

Package :

Tube

Drain Current-Max (Abs) (ID) :

120 A

Fall Time (Typ) :

40 ns

Terminal Finish :

Nickel (Ni)

Operating Temperature :

-55°C~150°C TJ

Brand :

IXYS

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Continuous Drain Current (ID) :

120A

Nominal Vgs :

4 V

Number of Pins :

3

Power Dissipation :

600W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Current Rating :

120A

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Power Dissipation-Max (Abs) :

600 W

Moisture Sensitivity Level (MSL) :

Not Applicable

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Maximum Operating Temperature :

+ 150 C

Product Status :

Not For New Designs

Drain-source On Resistance-Max :

0.017 Ω

Turn-Off Delay Time :

110 ns

Packaging :

Tube

Manufacturer :

IXYS

FET Feature :

--

Terminal Form :

UNSPECIFIED

Product Type :

Discrete Semiconductor Modules

Rise Time :

55ns

Product :

Power MOSFET Modules

Factory Lead Time :

8 Weeks

Vgs (Max) :

±20V

Threshold Voltage :

4V

Type :

HiPerFET

Series :

HiPerFET™

Drain to Source Voltage (Vdss) :

200V

Tradename :

HyperFET

Terminal Position :

UPPER

Length :

38.23 mm

Voltage - Rated DC :

200V

Number of Channels :

1 Channel

Operating Mode :

ENHANCEMENT MODE

Height :

9.6 mm

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Base Product Number :

IXFN120

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE