IXFN120N20

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

Not Applicable

Reach Compliance Code :

Compliant

Number of Pins :

3

Drain-source On Resistance-Max :

0.017 Ω

Package :

Tube

Recovery Time :

250 ns

Product Category :

Discrete Semiconductor Modules

Gate Charge (Qg) (Max) @ Vgs :

360nC @ 10V

Tradename :

HyperFET

Transistor Application :

SWITCHING

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

120A

Power Dissipation :

600W

Package Shape :

RECTANGULAR

Product Type :

Discrete Semiconductor Modules

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

480A

Lead Free :

Lead Free

Product :

Power MOSFET Modules

Length :

38.23 mm

Vgs(th) (Max) @ Id :

4V @ 8mA

Package / Case :

SOT-227-4, miniBLOC

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

120 A

Mounting Style :

Screw Mounts

Vgs (Max) :

±20V

Turn-Off Delay Time :

110 ns

Fall Time (Typ) :

40 ns

Surface Mount :

No

Width :

25.42 mm

Number of Channels :

1 Channel

Power Dissipation-Max :

600W Tc

FET Type :

N-Channel

Base Product Number :

IXFN120

Power Dissipation (Max) :

600W (Tc)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Rise Time :

55ns

Terminal Form :

UNSPECIFIED

Drain to Source Breakdown Voltage :

200V

Brand :

IXYS

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PUFM-X4

Drain to Source Voltage (Vdss) :

200V

DS Breakdown Voltage-Min :

200 V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS :

Details

Polarity/Channel Type :

N-Channel

FET Feature :

--

Voltage - Rated DC :

200V

Series :

HiPerFET™

Transistor Polarity :

N-Channel

Number of Terminals :

4

Mount :

Chassis Mount

Qualification Status :

Not Qualified

Resistance :

17mOhm

Product Status :

Not For New Designs

Number of Terminations :

4

Minimum Operating Temperature :

- 55 C

Threshold Voltage :

4V

Mounting Type :

Chassis Mount

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

3000 mJ

Maximum Operating Temperature :

+ 150 C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Dual Supply Voltage :

200V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Nickel (Ni)

Current Rating :

120A

REACH SVHC :

No SVHC

Terminal Position :

UPPER

Rds On (Max) @ Id, Vgs :

17m Ω @ 500mA, 10V

Type :

HiPerFET

Nominal Vgs :

4 V

Supplier Device Package :

SOT-227B

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Published :

2003

Additional Feature :

AVALANCHE RATED

Case Connection :

Isolated

Height :

9.6 mm

Pin Count :

4

Manufacturer :

IXYS

Packaging :

Tube

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

600 W