IXFN100N10S3
- Mfr.Part #
- IXFN100N10S3
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 100A SOT-227B
- Stock
- 36,063
- In Stock :
- 36,063
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Package / Case :
- SOT-227-4, miniBLOC
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Application :
- SWITCHING
- DS Breakdown Voltage-Min :
- 100V
- Vgs (Max) :
- ±20V
- Polarity/Channel Type :
- N-Channel
- Base Product Number :
- IXFN100
- Published :
- 2001
- Terminal Form :
- UNSPECIFIED
- Package Shape :
- RECTANGULAR
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Manufacturer :
- IXYS Corporation
- Power Dissipation (Max) :
- 360W (Tc)
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Terminal Position :
- UPPER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- Case Connection :
- Isolated
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 360W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HiPerFET™
- Drain to Source Voltage (Vdss) :
- 100V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 500mA, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 25V
- Mount :
- Chassis Mount
- Surface Mount :
- No
- Pin Count :
- 4
- Package :
- Tube
- Reach Compliance Code :
- Compliant
- Product Status :
- Obsolete
- Additional Feature :
- AVALANCHE RATED
- Vgs(th) (Max) @ Id :
- 4V @ 4mA
- Mounting Type :
- Chassis Mount
- Drain-source On Resistance-Max :
- 0.0125Ohm
- Operating Temperature :
- -40°C~150°C TJ
- Number of Terminations :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Terminal Finish :
- Nickel (Ni)
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 400 A
- Continuous Drain Current (ID) :
- 100A
- FET Feature :
- --
- Supplier Device Package :
- SOT-227B
- Number of Elements :
- 1
- Number of Terminals :
- 4
- Number of Pins :
- 4
- Datasheets
- IXFN100N10S3

N-Channel Tube 15m Ω @ 500mA, 10V ±20V 4500pF @ 25V 180nC @ 10V 100V SOT-227-4, miniBLOC
IXFN100N10S3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4500pF @ 25V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 400 A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IXFN100N10S3 Features
a continuous drain current (ID) of 100A
based on its rated peak drain current 400 A.
a 100V drain to source voltage (Vdss)
IXFN100N10S3 Applications
There are a lot of IXYS
IXFN100N10S3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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