IXFN80N60P3

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Mfr.Part #
IXFN80N60P3
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 600V 66A SOT-227B
Stock
46,482
In Stock :
46,482

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Position :
UPPER
Number of Elements :
1
Product Category :
Discrete Semiconductor Modules
Avalanche Energy Rating (Eas) :
2000 mJ
FET Type :
N-Channel
Case Connection :
Isolated
Factory Lead Time :
30 Weeks
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
13100pF @ 25V
Mounting Style :
Screw Mounts
Reach Compliance Code :
Unknown
Qualification :
-
Transistor Polarity :
N-Channel
Drain-source On Resistance-Max :
0.07Ohm
Series :
HiPerFET™, Polar3™
Moisture Sensitivity Level (MSL) :
Not Applicable
Drain to Source Voltage (Vdss) :
600V
Pulsed Drain Current-Max (IDM) :
200A
Radiation Hardening :
No
Product Type :
Discrete Semiconductor Modules
Packaging :
Tube
Vgs(th) (Max) @ Id :
5V @ 8mA
Mount :
Chassis Mount, Panel, Screw
Product :
Power MOSFET Modules
Continuous Drain Current (ID) :
66A
Turn On Delay Time :
48 ns
Number of Terminations :
4
Rds On (Max) @ Id, Vgs :
70m Ω @ 40A, 10V
Pin Count :
4
Number of Elements per Chip :
1
Additional Feature :
AVALANCHE RATED, UL RECOGNIZED
ECCN Code :
EAR99
Width :
25.07mm
Turn-Off Delay Time :
87 ns
Power Dissipation :
960W
Package / Case :
SOT-227-4, miniBLOC
Brand :
IXYS
Gate Charge (Qg) (Max) @ Vgs :
190nC @ 10V
Maximum Operating Temperature :
+150 °C
FET Feature :
--
MSL :
MSL 1 - Unlimited
Channel Mode :
Enhancement
Continuous Drain Current Id :
66A
Drive Voltage (Max Rds On,Min Rds On) :
10V
Current - Continuous Drain (Id) @ 25°C :
66A Tc
Terminal Form :
UNSPECIFIED
RoHS :
Details
Vgs (Max) :
±30V
Power Dissipation (Max) :
960W (Tc)
Operating Mode :
ENHANCEMENT MODE
Manufacturer :
IXYS
Transistor Application :
SWITCHING
Mounting Type :
Chassis Mount
Gate to Source Voltage (Vgs) :
30V
RoHS Status :
ROHS3 Compliant
Base Product Number :
IXFN80
Transistor Element Material :
SILICON
Configuration :
Single
DS Breakdown Voltage-Min :
600V
Height :
9.6mm
Minimum Operating Temperature :
-55 °C
Number of Channels :
1 Channel
Published :
2011
Lead Free :
Lead Free
Length :
38.23mm
Channel Type :
N Channel
Type :
HiPerFET
Package Type :
SOT-227
Power Dissipation-Max :
960W Tc
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Number of Pins :
4
Tradename :
HiPerFET
Product Status :
Active
Supplier Device Package :
SOT-227B
Datasheets
IXFN80N60P3
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN80N60P3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:SOT-227-4, miniBLOC, Mounting Type:Chassis Mount, Number of Channels:1 Channel, Type:HiPerFET, Operating Temperature:-55°C~150°C TJ, Number of Pins:4, IXFN80N60P3 pinout, IXFN80N60P3 datasheet PDF, IXFN80N60P3 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN80N60P3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN80N60P3


N-Channel Tube 70m Ω @ 40A, 10V ±30V 13100pF @ 25V 190nC @ 10V 600V SOT-227-4, miniBLOC

IXFN80N60P3 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2000 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13100pF @ 25V.This device conducts a continuous drain current (ID) of 66A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 87 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 200A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 48 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFN80N60P3 Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 66A
the turn-off delay time is 87 ns
based on its rated peak drain current 200A.
a 600V drain to source voltage (Vdss)


IXFN80N60P3 Applications


There are a lot of IXYS
IXFN80N60P3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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