IXFN80N50Q2
- Mfr.Part #
- IXFN80N50Q2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 72A SOT227B
- Stock
- 37,074
- In Stock :
- 37,074
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Resistance :
- 60mOhm
- Number of Pins :
- 4
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.06 Ω
- Pin Count :
- 4
- Rise Time :
- 25ns
- Transistor Application :
- SWITCHING
- RoHS :
- Details
- JESD-30 Code :
- R-PUFM-X4
- Supplier Device Package :
- SOT-227B
- Minimum Operating Temperature :
- - 55 C
- Radiation Hardening :
- No
- Product Category :
- Discrete Semiconductor Modules
- Mounting Style :
- Chassis Mount
- Height :
- 9.6 mm
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- Package / Case :
- SOT-227-4, miniBLOC
- RoHS Status :
- ROHS3 Compliant
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 500mA, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 250nC @ 10V
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2003
- Reach Compliance Code :
- Compliant
- Turn-Off Delay Time :
- 60 ns
- Qualification Status :
- Not Qualified
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 890W
- Number of Terminals :
- 4
- Manufacturer :
- IXYS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- HiPerFET™
- Vgs (Max) :
- ±30V
- Terminal Position :
- UPPER
- Operating Temperature :
- -55°C~150°C TJ
- Product Type :
- Discrete Semiconductor Modules
- Package Shape :
- RECTANGULAR
- Product Status :
- Active
- FET Type :
- N-Channel
- Terminal Finish :
- Nickel (Ni)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 80A
- Product :
- Power MOSFET Modules
- Drain to Source Breakdown Voltage :
- 500V
- Drain to Source Voltage (Vdss) :
- 500V
- Base Product Number :
- IXFN80
- Tradename :
- HiPerFET
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Subcategory :
- Discrete Semiconductor Modules
- Transistor Polarity :
- N-Channel
- Number of Elements :
- 1
- Maximum Operating Temperature :
- + 150 C
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Width :
- 25.42 mm
- Package :
- Tube
- DS Breakdown Voltage-Min :
- 500 V
- Number of Terminations :
- 4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Chassis Mount, Screw
- Length :
- 38.23 mm
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 11 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 12800pF @ 25V
- Case Connection :
- Isolated
- Pulsed Drain Current-Max (IDM) :
- 320A
- Power Dissipation-Max :
- 890W Tc
- Number of Channels :
- 1 Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Chassis Mount
- Additional Feature :
- AVALANCHE RATED
- Terminal Form :
- UNSPECIFIED
- Brand :
- IXYS
- Packaging :
- Tube
- FET Feature :
- --
- Power Dissipation (Max) :
- 890W (Tc)
- Polarity/Channel Type :
- N-Channel
- Datasheets
- IXFN80N50Q2

N-Channel Tube 60m Ω @ 500mA, 10V ±30V 12800pF @ 25V 250nC @ 10V 500V SOT-227-4, miniBLOC
IXFN80N50Q2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 12800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 320A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXFN80N50Q2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 320A.
a 500V drain to source voltage (Vdss)
IXFN80N50Q2 Applications
There are a lot of IXYS
IXFN80N50Q2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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