IXFN80N50Q2

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Mfr.Part #
IXFN80N50Q2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 72A SOT227B
Stock
37,074
In Stock :
37,074

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Resistance :
60mOhm
Number of Pins :
4
Transistor Element Material :
SILICON
Drain-source On Resistance-Max :
0.06 Ω
Pin Count :
4
Rise Time :
25ns
Transistor Application :
SWITCHING
RoHS :
Details
JESD-30 Code :
R-PUFM-X4
Supplier Device Package :
SOT-227B
Minimum Operating Temperature :
- 55 C
Radiation Hardening :
No
Product Category :
Discrete Semiconductor Modules
Mounting Style :
Chassis Mount
Height :
9.6 mm
Vgs(th) (Max) @ Id :
4.5V @ 8mA
Package / Case :
SOT-227-4, miniBLOC
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
60m Ω @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs :
250nC @ 10V
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Published :
2003
Reach Compliance Code :
Compliant
Turn-Off Delay Time :
60 ns
Qualification Status :
Not Qualified
Surface Mount :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation :
890W
Number of Terminals :
4
Manufacturer :
IXYS
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
HiPerFET™
Vgs (Max) :
±30V
Terminal Position :
UPPER
Operating Temperature :
-55°C~150°C TJ
Product Type :
Discrete Semiconductor Modules
Package Shape :
RECTANGULAR
Product Status :
Active
FET Type :
N-Channel
Terminal Finish :
Nickel (Ni)
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
80A
Product :
Power MOSFET Modules
Drain to Source Breakdown Voltage :
500V
Drain to Source Voltage (Vdss) :
500V
Base Product Number :
IXFN80
Tradename :
HiPerFET
Avalanche Energy Rating (Eas) :
5000 mJ
Subcategory :
Discrete Semiconductor Modules
Transistor Polarity :
N-Channel
Number of Elements :
1
Maximum Operating Temperature :
+ 150 C
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
72A Tc
Width :
25.42 mm
Package :
Tube
DS Breakdown Voltage-Min :
500 V
Number of Terminations :
4
Configuration :
SINGLE WITH BUILT-IN DIODE
Mount :
Chassis Mount, Screw
Length :
38.23 mm
Lead Free :
Lead Free
Pbfree Code :
yes
Fall Time (Typ) :
11 ns
Input Capacitance (Ciss) (Max) @ Vds :
12800pF @ 25V
Case Connection :
Isolated
Pulsed Drain Current-Max (IDM) :
320A
Power Dissipation-Max :
890W Tc
Number of Channels :
1 Channel
Gate to Source Voltage (Vgs) :
30V
Mounting Type :
Chassis Mount
Additional Feature :
AVALANCHE RATED
Terminal Form :
UNSPECIFIED
Brand :
IXYS
Packaging :
Tube
FET Feature :
--
Power Dissipation (Max) :
890W (Tc)
Polarity/Channel Type :
N-Channel
Datasheets
IXFN80N50Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN80N50Q2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, Operating Temperature:-55°C~150°C TJ, Number of Terminations:4, Number of Channels:1 Channel, Mounting Type:Chassis Mount, IXFN80N50Q2 pinout, IXFN80N50Q2 datasheet PDF, IXFN80N50Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN80N50Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN80N50Q2


N-Channel Tube 60m Ω @ 500mA, 10V ±30V 12800pF @ 25V 250nC @ 10V 500V SOT-227-4, miniBLOC

IXFN80N50Q2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 5000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 12800pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 500V, and this device has a drainage-to-source breakdown voltage of 500VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 320A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 500 V.For this transistor to work, a voltage 500V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFN80N50Q2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 320A.
a 500V drain to source voltage (Vdss)


IXFN80N50Q2 Applications


There are a lot of IXYS
IXFN80N50Q2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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