IXFN80N50P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

Single

Reach Compliance Code :

Compliant

Packaging :

Tube

Current Rating :

80A

Transistor Application :

SWITCHING

Package :

Tube

Terminal Position :

UPPER

Series :

PolarHV™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±30V

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

12700pF @ 25V

Avalanche Energy Rating (Eas) :

3000 mJ

Continuous Drain Current (ID) :

66A

Base Product Number :

IXFN80

Element Configuration :

Single

Number of Pins :

4

RoHS :

Details

FET Type :

N-Channel

Published :

2006

RoHS Status :

ROHS3 Compliant

Number of Terminations :

4

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Supplier Device Package :

SOT-227B

Mounting Style :

Screw Mounts

Polarity/Channel Type :

N-Channel

Width :

25.07mm

Surface Mount :

No

Manufacturer :

IXYS

Mounting Type :

Chassis Mount

Product :

Power MOSFET Modules

Package Shape :

RECTANGULAR

Package / Case :

SOT-227-4, miniBLOC

Number of Terminals :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Subcategory :

Discrete Semiconductor Modules

Rds On (Max) @ Id, Vgs :

65m Ω @ 500mA, 10V

Qualification Status :

Not Qualified

Drain to Source Breakdown Voltage :

500V

Power Dissipation-Max :

700W Tc

Number of Elements per Chip :

1

Vgs(th) (Max) @ Id :

5V @ 8mA

Tradename :

HiPerFET

Height :

9.6mm

Transistor Polarity :

N-Channel

Voltage - Rated DC :

500V

Drain-source On Resistance-Max :

0.065 Ω

Length :

38.2mm

Pulsed Drain Current-Max (IDM) :

200A

Channel Type :

N

Rise Time :

27ns

Power Dissipation (Max) :

700W (Tc)

Power Dissipation :

700W

Terminal Finish :

Nickel (Ni)

Transistor Element Material :

SILICON

Minimum Operating Temperature :

-55 °C

Product Type :

Discrete Semiconductor Modules

Turn-Off Delay Time :

70 ns

Product Category :

Discrete Semiconductor Modules

Brand :

IXYS

Channel Mode :

Enhancement

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Mount :

Chassis Mount, Panel

Maximum Operating Temperature :

+150 °C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package Type :

SOT-227

Lead Free :

Lead Free

Resistance :

55mOhm

Product Status :

Active

FET Feature :

--

Additional Feature :

UL RECOGNIZED, AVALANCHE RATED

JESD-30 Code :

R-PUFM-X4

Drain to Source Voltage (Vdss) :

500V

Pbfree Code :

yes

Turn On Delay Time :

25 ns

DS Breakdown Voltage-Min :

500 V

Fall Time (Typ) :

18 ns

Type :

HiPerFET

Number of Elements :

1