IXFN80N50

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Mfr.Part #
IXFN80N50
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 500V 80A SOT-227B
Stock
120
In Stock :
120

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Maximum Operating Temperature :
+150 °C
Resistance :
55mOhm
Width :
25.07mm
Drain-source On Resistance-Max :
0.065 Ω
Series :
PolarHV™
Number of Pins :
4
Operating Temperature :
-55°C~150°C TJ
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
Isolated
RoHS :
Details
Manufacturer :
IXYS
Turn-Off Delay Time :
70 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Transistor Application :
SWITCHING
Power Dissipation :
700W
Number of Terminals :
4
Product Type :
Discrete Semiconductor Modules
Current Rating :
80A
Voltage - Rated DC :
500V
Input Capacitance (Ciss) (Max) @ Vds :
12700pF @ 25V
Package :
Tube
Height :
9.6mm
Mounting Style :
Screw Mounts
Channel Type :
N
Polarity/Channel Type :
N-Channel
Terminal Finish :
Nickel (Ni)
Drain to Source Voltage (Vdss) :
500V
Rds On (Max) @ Id, Vgs :
65m Ω @ 500mA, 10V
Pbfree Code :
yes
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
66A
Fall Time (Typ) :
18 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
JESD-30 Code :
R-PUFM-X4
Package Type :
SOT-227
Number of Elements per Chip :
1
Transistor Polarity :
N-Channel
Mounting Type :
Chassis Mount
Power Dissipation (Max) :
700W (Tc)
Gate to Source Voltage (Vgs) :
30V
DS Breakdown Voltage-Min :
500 V
Operating Mode :
ENHANCEMENT MODE
Pin Count :
4
FET Feature :
--
Tradename :
HiPerFET
Mount :
Chassis Mount, Panel
Type :
HiPerFET
Power Dissipation-Max :
700W Tc
Rise Time :
27ns
Gate Charge (Qg) (Max) @ Vgs :
195nC @ 10V
Product :
Power MOSFET Modules
Number of Terminations :
4
Qualification Status :
Not Qualified
Brand :
IXYS
Package Shape :
RECTANGULAR
Subcategory :
Discrete Semiconductor Modules
Product Status :
Active
Channel Mode :
Enhancement
Product Category :
Discrete Semiconductor Modules
Vgs(th) (Max) @ Id :
5V @ 8mA
Published :
2006
Number of Channels :
1 Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Lead Free :
Lead Free
Package / Case :
SOT-227-4, miniBLOC
Pulsed Drain Current-Max (IDM) :
200A
Vgs (Max) :
±30V
Terminal Form :
UNSPECIFIED
Number of Elements :
1
Base Product Number :
IXFN80
RoHS Status :
ROHS3 Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Length :
38.2mm
Supplier Device Package :
SOT-227B
Terminal Position :
UPPER
Minimum Operating Temperature :
-55 °C
Drain to Source Breakdown Voltage :
500V
Avalanche Energy Rating (Eas) :
3000 mJ
Current - Continuous Drain (Id) @ 25°C :
66A Tc
Reach Compliance Code :
Compliant
FET Type :
N-Channel
Additional Feature :
UL RECOGNIZED, AVALANCHE RATED
Turn On Delay Time :
25 ns
Packaging :
Tube
Configuration :
Single
Datasheets
IXFN80N50
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN80N50 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Type:HiPerFET, Number of Terminations:4, Number of Channels:1 Channel, Package / Case:SOT-227-4, miniBLOC, IXFN80N50 pinout, IXFN80N50 datasheet PDF, IXFN80N50 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN80N50 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN80N50


N-Channel Tube 65m Ω @ 500mA, 10V ±30V 12700pF @ 25V 195nC @ 10V 500V SOT-227-4, miniBLOC

IXFN80N50P Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 12700pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 66A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 200A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IXFN80N50P Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 66A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 70 ns
based on its rated peak drain current 200A.
a 500V drain to source voltage (Vdss)


IXFN80N50P Applications


There are a lot of IXYS
IXFN80N50P applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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