IXFN80N48

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Mfr.Part #
IXFN80N48
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 480V 80A SOT-227B
Stock
21,038
In Stock :
21,038

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
SOT-227B
Qualification Status :
Not Qualified
Pulsed Drain Current-Max (IDM) :
320A
Fall Time (Typ) :
27 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminations :
4
Rds On (Max) @ Id, Vgs :
45m Ω @ 500mA, 10V
Manufacturer :
IXYS Corporation
Operating Temperature :
-55°C~150°C TJ
Terminal Position :
UPPER
Configuration :
SINGLE WITH BUILT-IN DIODE
Power Dissipation :
700W
Vgs(th) (Max) @ Id :
4V @ 8mA
Surface Mount :
No
Turn-Off Delay Time :
102 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Finish :
Nickel (Ni)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
480V
Power Dissipation-Max (Abs) :
700 W
Drain-source On Resistance-Max :
0.045 Ω
Series :
HiPerFET™
Terminal Form :
UNSPECIFIED
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Package Shape :
RECTANGULAR
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pbfree Code :
yes
Power Dissipation-Max :
700W Tc
Base Product Number :
IXFN80
Operating Mode :
ENHANCEMENT MODE
Drain Current-Max (Abs) (ID) :
80 A
Pin Count :
4
Mounting Type :
Chassis Mount
Number of Terminals :
4
Number of Elements :
1
Published :
2000
Gate to Source Voltage (Vgs) :
20V
Number of Pins :
4
RoHS Status :
RoHS Compliant
Drain to Source Voltage (Vdss) :
480V
Transistor Application :
SWITCHING
Power Dissipation (Max) :
700W (Tc)
Product Status :
Obsolete
Package :
Tube
Input Capacitance (Ciss) (Max) @ Vds :
9890pF @ 25V
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Rise Time :
70ns
Reach Compliance Code :
Compliant
Packaging :
Tube
FET Feature :
--
DS Breakdown Voltage-Min :
480 V
Case Connection :
Isolated
Gate Charge (Qg) (Max) @ Vgs :
380nC @ 10V
FET Type :
N-Channel
Mount :
Chassis Mount
JESD-30 Code :
R-PUFM-X4
Avalanche Energy Rating (Eas) :
6000 mJ
Continuous Drain Current (ID) :
80A
Package / Case :
SOT-227-4, miniBLOC
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Datasheets
IXFN80N48
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN80N48 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Operating Temperature:-55°C~150°C TJ, Mounting Type:Chassis Mount, Number of Pins:4, Package / Case:SOT-227-4, miniBLOC, IXFN80N48 pinout, IXFN80N48 datasheet PDF, IXFN80N48 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN80N48 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN80N48


N-Channel Tube 45m Ω @ 500mA, 10V ±20V 9890pF @ 25V 380nC @ 10V 480V SOT-227-4, miniBLOC

IXFN80N48 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 6000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9890pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=480V. And this device has 480V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 102 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 480 V in order to maintain normal operation.Operating this transistor requires a 480V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFN80N48 Features


the avalanche energy rating (Eas) is 6000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 480V voltage
the turn-off delay time is 102 ns
based on its rated peak drain current 320A.
a 480V drain to source voltage (Vdss)


IXFN80N48 Applications


There are a lot of IXYS
IXFN80N48 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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