IXFN80N48
- Mfr.Part #
- IXFN80N48
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 480V 80A SOT-227B
- Stock
- 21,038
- In Stock :
- 21,038
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- SOT-227B
- Qualification Status :
- Not Qualified
- Pulsed Drain Current-Max (IDM) :
- 320A
- Fall Time (Typ) :
- 27 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 4
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 500mA, 10V
- Manufacturer :
- IXYS Corporation
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- UPPER
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation :
- 700W
- Vgs(th) (Max) @ Id :
- 4V @ 8mA
- Surface Mount :
- No
- Turn-Off Delay Time :
- 102 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Nickel (Ni)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 480V
- Power Dissipation-Max (Abs) :
- 700 W
- Drain-source On Resistance-Max :
- 0.045 Ω
- Series :
- HiPerFET™
- Terminal Form :
- UNSPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Package Shape :
- RECTANGULAR
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 700W Tc
- Base Product Number :
- IXFN80
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 80 A
- Pin Count :
- 4
- Mounting Type :
- Chassis Mount
- Number of Terminals :
- 4
- Number of Elements :
- 1
- Published :
- 2000
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 4
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 480V
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 700W (Tc)
- Product Status :
- Obsolete
- Package :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 9890pF @ 25V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Rise Time :
- 70ns
- Reach Compliance Code :
- Compliant
- Packaging :
- Tube
- FET Feature :
- --
- DS Breakdown Voltage-Min :
- 480 V
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- FET Type :
- N-Channel
- Mount :
- Chassis Mount
- JESD-30 Code :
- R-PUFM-X4
- Avalanche Energy Rating (Eas) :
- 6000 mJ
- Continuous Drain Current (ID) :
- 80A
- Package / Case :
- SOT-227-4, miniBLOC
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- IXFN80N48

N-Channel Tube 45m Ω @ 500mA, 10V ±20V 9890pF @ 25V 380nC @ 10V 480V SOT-227-4, miniBLOC
IXFN80N48 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 6000 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 9890pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 80A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=480V. And this device has 480V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 80 A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 102 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 320A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 480 V in order to maintain normal operation.Operating this transistor requires a 480V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IXFN80N48 Features
the avalanche energy rating (Eas) is 6000 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 480V voltage
the turn-off delay time is 102 ns
based on its rated peak drain current 320A.
a 480V drain to source voltage (Vdss)
IXFN80N48 Applications
There are a lot of IXYS
IXFN80N48 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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