IXFN73N30Q

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

300 V

Published :

2004

Supplier Device Package :

SOT-227B

Terminal Position :

UPPER

Series :

HiPerFET™

Pin Count :

4

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Gate to Source Voltage (Vgs) :

30V

Mount :

Chassis Mount

Product Type :

Discrete Semiconductor Modules

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

300V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

2500 mJ

FET Type :

N-Channel

FET Feature :

--

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-55 °C

Turn-Off Delay Time :

82 ns

Tradename :

HyperFET

Fall Time (Typ) :

12 ns

ECCN Code :

EAR99

Max Operating Temperature :

150 °C

Transistor Application :

SWITCHING

Power Dissipation :

500W

Input Capacitance :

5.4 nF

Rds On Max :

45 mΩ

Terminal Finish :

Nickel (Ni)

Drain-source On Resistance-Max :

0.045 Ω

Power Dissipation (Max) :

481W (Tc)

Height :

9.6 mm

Vgs (Max) :

±30V

Maximum Operating Temperature :

+ 150 C

Package Shape :

RECTANGULAR

Transistor Polarity :

N-Channel

Mounting Style :

Chassis Mount

Package :

Tube

Product Status :

Active

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PUFM-X4

Product Category :

Discrete Semiconductor Modules

Minimum Operating Temperature :

- 55 C

Rds On (Max) @ Id, Vgs :

45m Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

300V

Drain Current-Max (Abs) (ID) :

73 A

Rise Time :

36ns

Brand :

IXYS

Product :

Power MOSFET Modules

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Reach Compliance Code :

Compliant

Width :

25.07 mm

Surface Mount :

No

Power Dissipation-Max :

481W Tc

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 25V

Number of Channels :

1 Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Packaging :

Tube

Mounting Type :

Chassis Mount

Pulsed Drain Current-Max (IDM) :

292A

Continuous Drain Current (ID) :

73A

Number of Pins :

4

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Case Connection :

Isolated

Terminal Form :

UNSPECIFIED

Vgs(th) (Max) @ Id :

4V @ 4mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminals :

4

Base Product Number :

IXFN73

Package / Case :

SOT-227-4, miniBLOC

Drain to Source Resistance :

45 mΩ

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Manufacturer :

IXYS

Power Dissipation-Max (Abs) :

500 W

Max Power Dissipation :

500 W

Length :

38.2 mm