IXFN73N30

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Maximum Operating Temperature :

+ 150 C

Power Dissipation-Max (Abs) :

500 W

Tradename :

HyperFET

Terminal Form :

UNSPECIFIED

Min Operating Temperature :

-55 °C

Length :

38.2 mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

481W Tc

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

Compliant

Continuous Drain Current (ID) :

73A

Mounting Type :

Chassis Mount

Packaging :

Tube

Height :

9.6 mm

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

300 V

Product :

Power MOSFET Modules

Pin Count :

4

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

2500 mJ

Vgs (Max) :

±30V

Max Operating Temperature :

150 °C

Polarity/Channel Type :

N-Channel

Supplier Device Package :

SOT-227B

Drain-source On Resistance-Max :

0.045 Ω

Transistor Application :

SWITCHING

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Rds On (Max) @ Id, Vgs :

45m Ω @ 500mA, 10V

Power Dissipation :

500W

Number of Terminals :

4

Mount :

Chassis Mount

Package Shape :

RECTANGULAR

Drain to Source Breakdown Voltage :

300V

Power Dissipation (Max) :

481W (Tc)

Rise Time :

36ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PUFM-X4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Resistance :

45 mΩ

Base Product Number :

IXFN73

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

Number of Channels :

1 Channel

Max Power Dissipation :

500 W

Pbfree Code :

yes

FET Type :

N-Channel

Brand :

IXYS

Width :

25.07 mm

Package / Case :

SOT-227-4, miniBLOC

Series :

HiPerFET™

Rds On Max :

45 mΩ

Terminal Finish :

Nickel (Ni)

Current - Continuous Drain (Id) @ 25°C :

73A Tc

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Mounting Style :

Chassis Mount

Number of Pins :

4

Number of Elements :

1

RoHS :

Details

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

300V

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

5400pF @ 25V

FET Feature :

--

Manufacturer :

IXYS

Operating Temperature :

-55°C~150°C TJ

Transistor Polarity :

N-Channel

Case Connection :

Isolated

Product Type :

Discrete Semiconductor Modules

Pulsed Drain Current-Max (IDM) :

292A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Category :

Discrete Semiconductor Modules

Drain Current-Max (Abs) (ID) :

73 A

Turn-Off Delay Time :

82 ns

Package :

Tube

Fall Time (Typ) :

12 ns

Number of Terminations :

4

Vgs(th) (Max) @ Id :

4V @ 4mA

Minimum Operating Temperature :

- 55 C

Input Capacitance :

5.4 nF

Transistor Element Material :

SILICON

Published :

2004