IXFN72N55Q2

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Mfr.Part #
IXFN72N55Q2
Manufacturer
Littelfuse
Package / Case
SOT-227-4, miniBLOC
Datasheet
Download
Description
MOSFET N-CH 550V 72A SOT-227B
Stock
47,279
In Stock :
47,279

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Additional Feature :
AVALANCHE RATED
Subcategory :
Discrete Semiconductor Modules
Brand :
IXYS
Qualification Status :
Not Qualified
Turn-Off Delay Time :
58 ns
Package :
Tube
Product Type :
Discrete Semiconductor Modules
Mounting Style :
Chassis Mount
Terminal Finish :
Nickel (Ni)
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
FET Feature :
--
Current - Continuous Drain (Id) @ 25°C :
72A Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Operating Temperature :
-55°C~150°C TJ
Width :
25.07 mm
Terminal Position :
UPPER
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
SOT-227-4, miniBLOC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
550V
Power Dissipation-Max :
890W Tc
Tradename :
HyperFET
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Transistor Element Material :
SILICON
Transistor Polarity :
N-Channel
Case Connection :
Isolated
Power Dissipation :
890W
Number of Channels :
1 Channel
Mount :
Chassis Mount
Power Dissipation (Max) :
890W (Tc)
RoHS Status :
ROHS3 Compliant
Rise Time :
23ns
Product :
Power MOSFET Modules
Gate Charge (Qg) (Max) @ Vgs :
258nC @ 10V
Number of Terminals :
4
JESD-30 Code :
R-PUFM-X4
Avalanche Energy Rating (Eas) :
5000 mJ
Package Shape :
RECTANGULAR
Base Product Number :
IXFN72
Drain to Source Breakdown Voltage :
550V
Number of Terminations :
4
Continuous Drain Current (ID) :
72A
Pulsed Drain Current-Max (IDM) :
288A
Surface Mount :
No
Series :
HiPerFET™
Length :
38.2 mm
Height :
9.6 mm
Product Category :
Discrete Semiconductor Modules
DS Breakdown Voltage-Min :
550 V
Polarity/Channel Type :
N-Channel
Packaging :
Tube
Rds On (Max) @ Id, Vgs :
72m Ω @ 500mA, 10V
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain-source On Resistance-Max :
0.072Ohm
Published :
2003
Fall Time (Typ) :
10 ns
Pin Count :
4
Transistor Application :
SWITCHING
Vgs (Max) :
±30V
Manufacturer :
IXYS
Supplier Device Package :
SOT-227B
Mounting Type :
Chassis Mount
Product Status :
Active
Number of Elements :
1
RoHS :
Details
Vgs(th) (Max) @ Id :
5V @ 8mA
Reach Compliance Code :
Compliant
FET Type :
N-Channel
Terminal Form :
UNSPECIFIED
Gate to Source Voltage (Vgs) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
4
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
10500pF @ 25V
Datasheets
IXFN72N55Q2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFN72N55Q2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-227-4, miniBLOC, Number of Channels:1 Channel, Number of Terminations:4, Mounting Type:Chassis Mount, Number of Pins:4, IXFN72N55Q2 pinout, IXFN72N55Q2 datasheet PDF, IXFN72N55Q2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFN72N55Q2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXFN72N55Q2


N-Channel Tube 72m Ω @ 500mA, 10V ±30V 10500pF @ 25V 258nC @ 10V 550V SOT-227-4, miniBLOC

IXFN72N55Q2 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 72A amps.In this device, the drain-source breakdown voltage is 550V and VGS=550V, so the drain-source breakdown voltage is 550V in this case.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 288A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 550 V to maintain normal operation.To operate this transistor, you will need a 550V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXFN72N55Q2 Features


the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 288A.
a 550V drain to source voltage (Vdss)


IXFN72N55Q2 Applications


There are a lot of IXYS
IXFN72N55Q2 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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