IXFN72N55Q2
- Mfr.Part #
- IXFN72N55Q2
- Manufacturer
- Littelfuse
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 550V 72A SOT-227B
- Stock
- 47,279
- In Stock :
- 47,279
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Additional Feature :
- AVALANCHE RATED
- Subcategory :
- Discrete Semiconductor Modules
- Brand :
- IXYS
- Qualification Status :
- Not Qualified
- Turn-Off Delay Time :
- 58 ns
- Package :
- Tube
- Product Type :
- Discrete Semiconductor Modules
- Mounting Style :
- Chassis Mount
- Terminal Finish :
- Nickel (Ni)
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- FET Feature :
- --
- Current - Continuous Drain (Id) @ 25°C :
- 72A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 25.07 mm
- Terminal Position :
- UPPER
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- SOT-227-4, miniBLOC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 550V
- Power Dissipation-Max :
- 890W Tc
- Tradename :
- HyperFET
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Transistor Element Material :
- SILICON
- Transistor Polarity :
- N-Channel
- Case Connection :
- Isolated
- Power Dissipation :
- 890W
- Number of Channels :
- 1 Channel
- Mount :
- Chassis Mount
- Power Dissipation (Max) :
- 890W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 23ns
- Product :
- Power MOSFET Modules
- Gate Charge (Qg) (Max) @ Vgs :
- 258nC @ 10V
- Number of Terminals :
- 4
- JESD-30 Code :
- R-PUFM-X4
- Avalanche Energy Rating (Eas) :
- 5000 mJ
- Package Shape :
- RECTANGULAR
- Base Product Number :
- IXFN72
- Drain to Source Breakdown Voltage :
- 550V
- Number of Terminations :
- 4
- Continuous Drain Current (ID) :
- 72A
- Pulsed Drain Current-Max (IDM) :
- 288A
- Surface Mount :
- No
- Series :
- HiPerFET™
- Length :
- 38.2 mm
- Height :
- 9.6 mm
- Product Category :
- Discrete Semiconductor Modules
- DS Breakdown Voltage-Min :
- 550 V
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 72m Ω @ 500mA, 10V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.072Ohm
- Published :
- 2003
- Fall Time (Typ) :
- 10 ns
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Manufacturer :
- IXYS
- Supplier Device Package :
- SOT-227B
- Mounting Type :
- Chassis Mount
- Product Status :
- Active
- Number of Elements :
- 1
- RoHS :
- Details
- Vgs(th) (Max) @ Id :
- 5V @ 8mA
- Reach Compliance Code :
- Compliant
- FET Type :
- N-Channel
- Terminal Form :
- UNSPECIFIED
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 10500pF @ 25V
- Datasheets
- IXFN72N55Q2

N-Channel Tube 72m Ω @ 500mA, 10V ±30V 10500pF @ 25V 258nC @ 10V 550V SOT-227-4, miniBLOC
IXFN72N55Q2 Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 5000 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 72A amps.In this device, the drain-source breakdown voltage is 550V and VGS=550V, so the drain-source breakdown voltage is 550V in this case.It is [58 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 288A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.The DS breakdown voltage should be maintained above 550 V to maintain normal operation.To operate this transistor, you will need a 550V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXFN72N55Q2 Features
the avalanche energy rating (Eas) is 5000 mJ
a continuous drain current (ID) of 72A
a drain-to-source breakdown voltage of 550V voltage
the turn-off delay time is 58 ns
based on its rated peak drain current 288A.
a 550V drain to source voltage (Vdss)
IXFN72N55Q2 Applications
There are a lot of IXYS
IXFN72N55Q2 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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