IXFN70N60Q2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

890W Tc

Number of Pins :

4

Drain Current-Max (Abs) (ID) :

70 A

Number of Terminations :

4

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tube

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Terminal Position :

UPPER

Number of Terminals :

4

Continuous Drain Current (ID) :

70A

Polarity/Channel Type :

N-Channel

Product Type :

Discrete Semiconductor Modules

Length :

38.2 mm

Qualification Status :

Not Qualified

Factory Lead Time :

10 Weeks

Drain to Source Voltage (Vdss) :

600V

Published :

2003

Base Product Number :

IXFN70

Max Operating Temperature :

150 °C

Maximum Operating Temperature :

+ 150 C

Turn-Off Delay Time :

60 ns

Case Connection :

Isolated

Vgs (Max) :

±30V

Pulsed Drain Current-Max (IDM) :

280A

Vgs(th) (Max) @ Id :

5V @ 8mA

Pin Count :

4

Mount :

Chassis Mount, Screw

Package / Case :

SOT-227-4, miniBLOC

Input Capacitance :

7.2 nF

Rds On (Max) @ Id, Vgs :

80m Ω @ 35A, 10V

Radiation Hardening :

No

Series :

HiPerFET™

Height :

9.6 mm

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1 Channel

DS Breakdown Voltage-Min :

600 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Brand :

IXYS

Fall Time (Typ) :

12 ns

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Mounting Type :

Chassis Mount

Rise Time :

25ns

Terminal Finish :

Nickel (Ni)

Package Shape :

RECTANGULAR

Number of Elements :

1

Transistor Polarity :

N-Channel

Power Dissipation (Max) :

890W (Tc)

Tradename :

HiPerFET

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Power Dissipation-Max (Abs) :

890 W

Surface Mount :

No

JESD-30 Code :

R-PUFM-X4

FET Feature :

--

Minimum Operating Temperature :

- 55 C

Terminal Form :

UNSPECIFIED

Product Status :

Not For New Designs

Drain to Source Resistance :

80 mΩ

Max Power Dissipation :

890 W

Mounting Style :

Chassis Mount

Min Operating Temperature :

-55 °C

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

5000 mJ

Rds On Max :

80 mΩ

Lead Free :

Lead Free

Supplier Device Package :

SOT-227B

Drain to Source Breakdown Voltage :

600V

Pbfree Code :

yes

Power Dissipation :

890W

FET Type :

N-Channel

Width :

25.07 mm

Product :

Power MOSFET Modules

Package :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.08Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

265nC @ 10V

Manufacturer :

IXYS

RoHS :

Details

Product Category :

Discrete Semiconductor Modules

Additional Feature :

AVALANCHE RATED